By using nanoindentation test and four point probe method, the length scaled dependent mechanical property (hardness/strength) and electrical property (resistivity) of Cu/X(X=Cr, Nb) nanostructured metallic multilayers with equal individual layer thickness were systematically investigated. It is revealed from the microstructural analysis that the modulation structure of Cu/X metallic multilayers is clear, and the preferred growth planes of Cu layer and X layer are {111} and {110}, respectively. The indentation test shows that the hardness/strength of the multilayers increases with reducing modulation period λ. The deformation mechanism of the multilayers transits from the glide of single dislocation in a Cu layer to the interface cutting at a critical modulation period λc (λc ≈25 nm). The resistivity of Cu/X multilayers is not only related to the scattering of conduction electrons at surfaces/interfaces and grain boundaries, but also affected by the interface condition at small scale. This significant interface effect on the length scale–dependent resistivity is assessed using a modified FS–MS model. The best combination of strength–resistivity can be achieved by tailoring the microstructure of Cu/X nanostructured metallic multilayers.
ZHANG Jin-Yu
,
ZHANG Jin-Yu
,
LIU Gang
,
ZHANG Guo-Jun
,
XUN Jun
. LENGTH SCALE DEPENDENT MECHANICAL/ELECTRICAL PROPERTIES OF Cu/X (X=Cr, Nb) NANOSTRUCTURED METALLIC MULTILAYERS[J]. Acta Metall Sin, 2011
, 47(10)
: 1348
-1354
.
DOI: 10.3724/SP.J.1037.2011.00246
[1] Spearing S M. Acta Mater, 2000; 48: 179
[2] Suo Z G, Vlassak J, Wagner S. China Particuology, 2005; 3: 321
[3] Bakonyi I, P´eter L. Prog Mater Sci, 2010; 55: 107
[4] Was G S, Foecke T. Thin Solid Films, 1996; 286: 1
[5] Li Y P, Zhang G P. Acta Mater, 2010; 58: 3877
[6] Wang M, Zhang B, Zhang G P, Yu Q Y, Liu C S. J Mater Sci Technol, 2009; 25: 699
[7] Misra A, Krug H. Adv Eng Mater, 2001; 3: 217
[8] Misra A, Hirth J P, Hoagland R G. Acta Mater, 2005; 53: 4817
[9] Fu E G, Li N, Misra A, Hoagland R G, Wang H, Zhang X. Mater Sci Eng, 2008; A493: 283
[10] McKeown J, Misra A, Kung H, Hoagland R G, Nastasi M. Scr Mater, 2002; 46: 593
[11] Liu Y, Bufford D, Wang H, Sun C, Zhang X. Acta Mater, 2011; 59: 1924
[12] Anderson P M, Li C. Nanostruct Mater, 1995; 5: 349
[13] Embury J D, Hirth J P. Acta Metall Mater, 1994; 42: 2051
[14] Phillips M A, Clemens B M, Nix W D. Acta Mater, 2003; 51: 3171
[15] Koehler J S. Phys Rev, 1970; 2B: 547
[16] Rao S I, Hazzledine P M. Philos Mag, 2000; 80A: 2011
[17] Hoagland R G, Kurtz R J, Henager Jr C H. Scr Mater, 2004; 50: 775
[18] Schroder K, Hollander J. Thin Solid Films, 2004; 458: 322
[19] Liu H D, Zhao Y P, Ramanath G, Murarka S P, Wang G C. Thin Solid Films, 2001; 384: 151
[20] Liu M X, Xu K W. J Mater Res, 2008; 23: 1658
[21] Fuchs K. Proc Cambridge Philos Soc, 1938; 34: 100
[22] Sondheimer E H. Adv Phys, 2001; 50: 499
[23] Mayadas A F, Shatzkes M. Phys Rev, 1970; 1B: 1382
[24] Camacho J M, Oliva A I. Thin Solid Films, 2006; 515: 1881
[25] Durkan C, Welland M E. Phys Rev, 2000; 61B: 14215
[26] Jin X, Zhou Y, Kim C O, Lee Y P, Xu H B, Gong S K. J Appl Phys, 2002; 91: 6071
[27] Namba Y. Jpn J Appl Phys, 1970; 9: 1326
[28] Michez L A, Hickey B J, Shatz S, Wiser N. Phys Rev, 2004; 70B: 052402
[29] Oliver W C, Pharr G M. J Mater Res, 1992; 7: 1564
[30] Deng X, Chawla N, Chawla K K, Koopman M. Acta Mater, 2004; 52: 4291
[31] Garrido Maneiro M A, Rodr´?guez J. Scr Mater, 2005; 52: 593
[32] Ma Z S, Long S G, Zhou Y C, Pan Y. Scr Mater, 2008; 59: 195
[33] Zhang J Y, Zhang X, Liu G, Zhang G J, Sun J. Scr Mater, 2010; 63: 101
[34] Misra A, Hundley M F, Hristova D, Kung H, Mitchell T E, Nastasi M, Embury J D. J Appl Phys, 1999; 85: 302
[35] Lima A L, Zhang X, Misra A, Booth C H, Bauer E D, Hundley M F. Thin Solid Films, 2007; 515: 3574
[36] Lu L, Shen Y F, Chen X H, Qian L H, Lu K. Science, 2004; 304: 422
[37] Anderoglu O, Misra A, Wang H, Ronning F, Hundley M F, Zhang X. Appl Phys Lett, 2008; 93: 083108
