Cite this article:
. . Acta Metall Sin, 2007, 43(10): 1071-1076 .
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Abstract It was simulated that the thermal stress field evolution in the growing crystal during vertical Bridgman CdZnTe crystal growth process with thermal elastic model. The influence of the thickness of the graphite film plating on the inner wall of the quartz crucible on the thermal stress was investigated. The results show that the thermal stress in the edge of the crystal is much larger than the thermal stress in the center of the crystal. With the increase of the graphite film thickness, the thermal stress in the edge of the crystal decreases markedly, while the thermal stress in the centre of the crystal changes little. In addition, there are two maximal von Mises stress regions, one is under the liquid-solid surface, and the maximal stress “max1”is on the peripheral crystal adhered with the inner wall of the crucible, the other is at the bottom of the crystals, the maximal stress “max2” is at the peripheral of the crystal adhered with the inner wall of the crucible. The stresses in both the “max1”and “max2” stress regions increased rapidly during the phase transfer process, and increased continuously during the crystal cooling down process. With the increase of the thickness of the graphite film, both of the “max1” and “max2” stress decreased, and the area of the “max2” stress region (distance from the bottom of the crystal to the minimum stress “min2”) is also decreased.
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Received: 10 January 2007
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