Acta Metall Sin  2007, Vol. 43 Issue (11): 1165-1170     DOI:

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The magnetic properties and interface electronic structure for the epitaxial Fe/MgO/Fe(001) single crystal magnetic tunneling junctions

TONG Liuniu; LI Tai; XIA Ailin; HU Jinlian;LEE Changyu

School of Materials Science and Engineering; Anhui Key Laboratory of Metal Materials and Processing; Anhui University of Technology

TONG Liuniu; LI Tai; XIA Ailin; HU Jinlian; LEE Changyu. The magnetic properties and interface electronic structure for the epitaxial Fe/MgO/Fe(001) single crystal magnetic tunneling junctions. Acta Metall Sin, 2007, 43(11): 1165-1170 .

Abstract Related Articles Recommended Metrics Download:  PDF(769KB)  Export:  BibTeX | EndNote (RIS)       Abstract  Fully epitaxial Fe/MgO/Fe(001) magnetic tunneling junctions (MTJs) were fabricated on GaAs(001)-4亊6 surface. The in-situ longitudinal magneto-optical Kerr effect (MOKE) measurements showed a typical two steps MOKE loop when the magnetic field applied along [1-10] direction. It was found that the coercivity of bottom Fe electrode (200 Oe) is about 20 times higher than that of top Fe layer. A remarkably increase of the coercivity in the bottom Fe layer was attributed to the pinning effect at MgO/Fe/GaAs(001) interfaces. Spin-resolved valence band photoemission spectroscopy measurements showed that upon MgO overlayer the spin polarization at Fermi level of bcc Fe(001) reverses the sign from negative into positive. The sign reversion of the spin polarization is ascribed to a selective modification of the electronic states mainly in minority ∆5伀 symmetry involved at the MgO/Fe(001) interface. Key words:  Magnetic tunneling Junctions      Spin-resolved photoemission spectroscopy      Spin Polarization       Received:  10 November 2006      ZTFLH:  O484.4   Service E-mail this article Add to citation manager E-mail Alert RSS （） Articles by authors TONG Liuniu LI Tai XIA Ailin HU Jinlian LEE Changyu URL:  https://www.ams.org.cn/EN/     OR     https://www.ams.org.cn/EN/Y2007/V43/I11/1165 [1] REN Shihao, LIU Yongli, MENG Fanshun, QI Yang. Strain-Engineered Semiconductor to Semimetallic Transition and Its Mechanism in Bi(111) Film[J]. 金属学报, 2022, 58(7): 911-920. [2] Caihong DONG, Yongli LIU, Yang QI. Effect of Thickness on the Surface and Electronic Properties of Bi Film[J]. 金属学报, 2018, 54(6): 935-942. [3] SUN Lina, TAN Jun, BA Dechun, YUAN Peixin. UPCONVERSION WHITE PHOTOLUMINESCENCE AND FERROELECTRIC PROPERTY FOR Er3+-Tm3+- Yb3+ TRI-CODOPED Bi4Ti3O12 THIN FILM[J]. 金属学报, 2014, 50(1): 88-94. [4] ZHANG Yao; Chi-Yuen CHUNG. PITT investigation of apparent diffusion of lithium-ion through PLD-deposited HT-LiCoO2 films[J]. 金属学报, 2007, 43(8): 818-822 . [5] Ge-Yang LI. Study on the Sensitivity of Mechanical Properties of TiN/Si3N4 Nano-structured Film to Si3N4 Layer Thickness[J]. 金属学报, 2007, 43(2): 154-158 . [6] WANG Lijin; ZHANG Hui; TENG Jiao; ZHU Fengwu. EFFECTS OF Ta SEED LAYER ON THE MICROSTRUCTURE AND MAGNETIC PROPERTY OF Ni65Co35 FILMS[J]. 金属学报, 2006, 42(9): 979-982 . [7] FU Engang; ZHUANG Daming; ZHANG Gong. Infrared properties and mechanism of Al-doped ZnO thin films[J]. 金属学报, 2005, 41(3): 333-336 . [8] ZOU Yousheng; WANG Wei; ZHENG Jingdi; SUN Chao; HUANG Rongfang; WEN Lishi. Influence of Bias Voltage on Diamond-Like Carbon Film Deposited by Arc Ion Plating[J]. 金属学报, 2004, 40(5): 537-540 . [9] LI Liuhe; WU Yongqin; CUI Xuming; ZHANG Haiquan; ZHANG Yanhua; XIA Lifang; Paul K. Chu. Raman Spectra of Diamond-Like Carbon Films Deposited by Vacuum Cathodic Arc[J]. 金属学报, 2004, 40(2): 220-224 . [10] . [J]. 金属学报, 2003, 39(7): 775-780 . [11] . [J]. 金属学报, 2003, 39(3): 332-336 . [12] . [J]. 金属学报, 2001, 37(10): 1097-1099 . [13] . [J]. 金属学报, 2001, 37(5): 477-482 . [14] . [J]. 金属学报, 2001, 37(3): 277-280 . [15] . [J]. 金属学报, 2000, 36(11): 1165-1168 . No Suggested Reading articles found! Viewed Full text Abstract Cited   Shared      Discussed