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Acta Metall Sin  1985, Vol. 21 Issue (1): 81-85    DOI:
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INTERACTION AMONG Si IN LEC GaAs AND B_2O_3 AND H_2O IN THE ENCAPSULANT
ZHANG Minquan;ZOU Yuanxi(Chou Yuanhsi);FANG Dunfu Shanghai Institute of Metallurgy;Academia Sinica
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ZHANG Minquan;ZOU Yuanxi(Chou Yuanhsi);FANG Dunfu Shanghai Institute of Metallurgy;Academia Sinica. INTERACTION AMONG Si IN LEC GaAs AND B_2O_3 AND H_2O IN THE ENCAPSULANT. Acta Metall Sin, 1985, 21(1): 81-85.

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Abstract  Three straight lines have been obtained by plotting[Si]vs[B]in LEC GaAson the basis of infrared LVM absorption spectra and SIMS data reported in therecent literature.The difference in slope of the lines is discussed from the point ofview of the difference in the crystal growth technique used by various investi-gators.
Received:  18 January 1985     
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