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Acta Metall Sin  1986, Vol. 22 Issue (5): 128-133    DOI:
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THE COMPUTER SIMULATION OF ION SPUTTER PROFILING PROCESS
QU Zhe; XIE Tiansheng (Institute of Metal Research; Academia Sinica. Shenyang)
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QU Zhe; XIE Tiansheng (Institute of Metal Research; Academia Sinica. Shenyang). THE COMPUTER SIMULATION OF ION SPUTTER PROFILING PROCESS. Acta Metall Sin, 1986, 22(5): 128-133.

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Abstract  Based on the common used assumptions and differential sputtering model, the equations describing sputtering process have been derived. Both concentration and depth can be calculated simultaneously. It is suitable not only for the homogeneous binary systems but also for the multicomponent systems which are not necessary to be a homogeneous one. Some possible original concentration distribution systems have been treated with those equations and showed they are workable.
Received:  18 May 1986     
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