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| OBSERVATION OF CoSi PHASE TRANSFORMATION IN Co FILM |
| ZHANG Zaoli; XIAO Zhigang; DU Guowei (University of Science and Technology Beijing; Beijing 100083)(Manuscript received 1994-05-18; in revised form 1994-10-18) |
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Cite this article:
ZHANG Zaoli; XIAO Zhigang; DU Guowei (University of Science and Technology Beijing; Beijing 100083)(Manuscript received 1994-05-18; in revised form 1994-10-18). OBSERVATION OF CoSi PHASE TRANSFORMATION IN Co FILM. Acta Metall Sin, 1995, 31(16): 179-182.
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Abstract TEM observation was carried out on the phase transformation of CoSi along Co/ Si interface of the film grown on the Si substrate annealed at 250, 450 or 500℃respectively. CoSi is found to be the polycrystalline grains and no epitaxial relationship occurred between Si substrate and CoSi. The sequence of phase transformation for Co/Si interface in the annealing temperature range may be：250-450℃ 450-500℃Co2Si+ CoSi─→ CoSi─→CoSi+CoSi2(Correspondent: ZHANG Zaoli, Department of Material Physics, University of Science and TechnologyBeijing Beijing 100083)
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