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TRANSITION FROM CRYSTALLINE Al TO AMORPHOUS Al_2O_3 BY O~+-IMPLANTATION |
SUN Shuzi (Northeast Institute of Technology; Shenyang) (Manuscript received 28 March; 1983; revised manuscript 8 October; 1983) |
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Cite this article:
SUN Shuzi (Northeast Institute of Technology; Shenyang) (Manuscript received 28 March; 1983; revised manuscript 8 October; 1983). TRANSITION FROM CRYSTALLINE Al TO AMORPHOUS Al_2O_3 BY O~+-IMPLANTATION. Acta Metall Sin, 1984, 20(4): 358-361.
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Abstract TEM was employed to study the transition from crystalline Al to amorphous state Al_2O_3 by O~+-implantation. The structural feature of the thin film specimen appears to be fcc polycrystals between 200 to 600(■) and to refine obviously during O~+ implanting. The refinement may be down to 19-40(■) when the increasing of the dose of O~+-implanted up to 1×10~(17) ion/cm~2. The diffraction pattern becomes the faint diffuse scattering ring, i.e., an enough evidence of the order-disorder transition or the amorphous formation is given. ESCA has identified that the amorphous substance is Al_2O_3.
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Received: 18 April 1984
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1 Borders, J. A.; Cullis, A.G; Poate, J.M., Applications of Ion Beams to Materials, Ed. Carter, G., Phys. Conf. Ser. 28, 1976, Chapt. 5, p.204. 2 Myers, S.M., J. Vac. Sci. Technol., 17 (1980) , 310. 3 Poate, J.M., J. Vac. Sci. Technol., 15 (1978) , 1636. 4 Carter, G.; Grant, W.A., Ion Implantation of Semiconductors, Edward Arnold, London, 1976. 5 Grant, W.A., J. Vac. Sci. Technol., 15(1978) , 1644. |
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