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| DYNAMICAL BEHAVIOUR OF A DISLOCATION GROUP CONTAINING A SOURCE Ⅰ.Computer Simulation of the Glide Motion of a Dislocation Group Emitted from a Source |
| Patu and Lei Qiongzhi (Institute of Metal Research; Academia Sinica) |
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Cite this article:
Patu and Lei Qiongzhi (Institute of Metal Research; Academia Sinica). DYNAMICAL BEHAVIOUR OF A DISLOCATION GROUP CONTAINING A SOURCE Ⅰ.Computer Simulation of the Glide Motion of a Dislocation Group Emitted from a Source. Acta Metall Sin, 1981, 17(2): 177-184.
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Abstract According to ν=c_0(τ/τ_0)~m and the condition of dislocation source operation, the glide motion of a dislocation group emitted from a source under a constant applied stress, is simulated on a computer by using experimental data of isolated dislocation velocity in silicon crystals. The following conclusion is obtained:1. The velocity of a leading dislocation in a group emitted from a source is approximately 1.36 times the velocity of an isolated dislocation. This result agrees with the experimental ones obtained in silicon crystals.2. The average velocity of all dislocations in a group emitted from a source, is equal to the velocity of an isolated dislocation.3. In a dislocation group emitted from a source, the average density of all dislocations, is proportional to τ_a, and the rate of generation of dislocations from a source is found to be:dN/dt∞τ_a~(m+1) e~(-Q/kT).
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Received: 18 February 1981
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