Al掺杂对CuInTe2热电性能的影响
收稿日期: 2025-09-16
修回日期: 2026-03-09
网络出版日期: 2026-03-26
基金资助
国家自然科学基金项目(52271025);国家自然科学基金项目(51927801);国家自然科学基金项目(U22A20174);辽宁省科技计划项目(2023JH2/101700295);大连科技创新项目(2023JJ12GX021);克拉玛依市创新杰出青年人才项目(XQZX20230103)
Influence of Al Doping on Thermoelectric Properties of CuInTe2
Received date: 2025-09-16
Revised date: 2026-03-09
Online published: 2026-03-26
Supported by
National Natural Science Foundation of China(52271025);National Natural Science Foundation of China(51927801);National Natural Science Foundation of China(U22A20174);Science and Technology Planning Project of Liaoning Province(2023JH2/101700295);Innovation Foundation of Science and the Technology of Dalian(2023JJ12GX021);Innovation Outstanding Young Talent Program of Karamay(XQZX20230103)
CuInTe2的弱电导率和相对高的晶格热导率导致其较低的热电优值(ZT值)和转换效率，从而阻碍了其在热电领域的商业化应用。本工作通过固态反应和热压烧结法制备了一系列Al掺杂的CuIn1-xAlxTe2化合物，研究了Al掺杂量对微观结构和热电性能的影响。结果表明，Al掺杂明显增大了载流子浓度，从而提升了电性能。同时，Al掺杂引入了取代型点缺陷、位错、应变波动和CuInAl4Te8纳米析出相，抑制了声子运输，从而实现晶格热导率的下降。最终，在823 K时，CuIn0.8Al0.2Te2达到最小晶格热导率(0.72 W/(m·K))，同时达到ZT值峰值(0.88)，比基体提升了115%。CuIn0.8Al0.2Te2在323~823和523~823 K间的平均ZT值分别为0.34和0.60，分别比基体增加了127%和122%。CuIn1-xAlxTe2化合物ZT值和平均ZT值的明显提升表明了CuInTe2 In位掺杂的有效性。
杨二阔 , 张泽宇 , 王亚松 , 彭威 , 历长云 , 李广书 , 康慧君 , 王同敏 . Al掺杂对CuInTe2热电性能的影响[J]. 金属学报, 2026 , 62(6) : 1137 -1146 . DOI: 10.11900/0412.1961.2025.00269
The low electrical conductivity exhibited by CuInTe2, coupled with its relatively high lattice thermal conductivity, results in a suboptimal thermoelectric figure of merit (ZT) and conversion efficiency, thereby hindering its potential for commercial application in the field of thermoelectricity. A series of Al-doped CuInTe2 compounds were successfully prepared using solid-state reaction and spark plasma sintering techniques in this study. The influence of aluminum doping on the structure and thermoelectric performance was systematically investigated. Al doping remarkably enhances electrical transport performance by increasing carrier concentration. Meanwhile, Al doping induces substitutional point defects, dislocations, strain fluctuations, and nanoprecipitations of CuInAl4Te8, which act as additional barriers to phonon transport, leading to a reduction in the lattice thermal conductivity. Consequently, a minimum lattice thermal conductivity of 0.72 W/(m·K) at 823 K was obtained for CuIn0.8Al0.2Te2 sample, and a maximum ZT value of 0.88, an enhancement of 115% than pristine CuInTe2. The average ZT values at 323-823 K and 523-823 K were 0.34 and 0.60, respectively, representing approximately 127% and 122% compared with pristine CuInTe2. The remarkable enhancement of ZT and average ZT values for CuIn1-xAlxTe2 compounds demonstrates the efficacy of In-site doping in CuInTe2.
Key words： CuInTe2; thermoelectric materials; doping; Seebeck coefficient
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