采用磁控溅射先驱丝法并结合热等静压技术制备了SiC_f/Ti65复合材料，对其在650、750、800和900 ℃进行了长时间热暴露实验。结果表明，热等静压和热暴露过程中，SiC_f/Ti65复合材料内部各元素同时参与界面互扩散和基体相变扩散。热等静压后，SiC_f/Ti65复合材料界面反应层产物主要为TiC，基体中相变产物为等轴的(Zr, Nb)₅Si₄。热暴露过程中，界面反应逐渐生成了Ti₅Si₃和(Zr, Nb)₅Si₄，基体相变则有了Ti₃(Al, Sn)C和TiC生成。SiC_f /Ti65复合材料反应层长大激活能为93 kJ/mol，该材料界面可以在650 ℃及以下温度长时间保持稳定。

Continuous silicon carbide (SiC) ?ber-reinforced titanium metal-matrix composites (TMCs) are potential candidates for high temperature application in jet engines because of their high specific strength and stiffness. However, severe interfacial reactions caused by high temperature manufacture and service have a detrimental effect on the mechanical properties of composites. Furthermore, the phase transition occurred in matrix at elevated temperature is unfavorable to the properties. In this work, the interfacial reaction, matrix phase transformation and thermal stability of SiC_f /Ti65 composites were investigated. The composites were prepared by the combination of magnetron sputtering and hot isostatic pressing (HIP) method. Matrix-coated precursor wires prepared by sputtering were aligned, degased and encapsulated, then consolidated by HIP. And the densified composites were subjected to long-term thermal exposure at 650, 750, 800 and 900 ℃, respectively. Reaction products and element diffusion of SiC_f /Ti65 composites in different conditions were studied. The results show that the elements diffuse and participate in both interfacial reaction and matrix phase transition during HIP and thermal exposure process. In the as-processed SiC_f /Ti65 composites, TiC is the main product of interfacial reaction layer, and (Zr, Nb)₅Si₄ is the product of matrix phase transition. With the continuous consumption of C-coating layer in the process of thermal exposure, Ti₅Si₃ and (Zr, Nb)₅Si₄ form in the interfacial reaction layer, while Ti₃(Al, Sn)C and TiC precipitate in the matrix. The results of thermal stability study indicate a parabolic correlation between interfacial reaction layer thickness and exposure time, and the activation energy of reaction layer growth estimated by Arrhenius equation is 93 kJ/mol. The interface of SiC_f /Ti65 composites is stable below 650 ℃.