含缺陷金属Ti力学性能的模拟研究
梁力, 女, 1986年生, 助理研究员
修回日期: 2014-06-25
网络出版日期: 2015-01-25
基金资助
*国家自然科学基金项目51406187, 中国工程物理研究院科学技术发展基金项目2014B0401060和中国工程物理研究院电子工程研究所科技创新基金项目S20140805项目
A SIMULATION STUDY OF MECHANICAL PROPER-TIES OF METAL Ti SAMPLE WITH DEFECTS
Revised date: 2014-06-25
Online published: 2015-01-25
Supported by
Supported by National Natural Science Foundation of China (No.51406187), Science and Technology Development Foundation of China Academy of Engineering Physics (No.2014B0401060) and Technology Innovation Foundation of Institute of Electronic Engineering, China Academy of Engineering Physics (No.S20140805)
梁力 , 马明旺 , 谈效华 , 向伟 , 王远 , 程焰林 . 含缺陷金属Ti力学性能的模拟研究[J]. 金属学报, 2015 , 51(1) : 107 -113 . DOI: 10.11900/0412.1961.2014.00336
The effect of defects in metal Ti such as vacancies, self-interstitial atoms and impurity He atoms on mechanical properties of metal Ti sample was studied using molecular dynamics simulation. First, the stress-strain curves of perfect Ti sample at different strain rates were calculated. The results show that the stretching process can roughly be divided into three stages, elastic deformation, plastic deformation and fracturing. For comparison the stress-strain curves of metal Ti samples with vacancies, self-interstitial atoms and impurity He atoms were researched, respectively, in which the strain rate was set as 2×109 s-1. Finally the corresponding Young's moduli were calculated. It is found that after carefully investigating that the mechanical properties of metal Ti are degraded by each of these effects in it and the degradation degree increases with increasing defect concentration. However, the stretching process of samples is not essentially affected by these effects (the stress-strain curves of Ti samples with defects have still 3 stages). In this process, self-interstitial atoms in samples always exist for they to be bonded by metal Ti atoms, but impurity He atoms in samples are released due to their extraordinarily low solution in metal Ti.
Key words: defect; mechanical property; molecular dynamics simulation
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