纳米压痕法确定TSV-Cu的应力-应变关系*
作者简介: 秦飞, 男, 1965年生, 教授
收稿日期: 2013-12-03
修回日期: 2014-03-18
网络出版日期: 2014-06-20
基金资助
*国家自然科学基金资助项目11272018
THE STRESS-STRAIN RELATIONSHIP OF TSV-Cu DETERMINED BY NANOINDENTATION
Received date: 2013-12-03
Revised date: 2014-03-18
Online published: 2014-06-20
Supported by
Supported by National Natural Science Foundation of China (No.11272018)
为得到硅通孔电镀填充铜(TSV-Cu)的力学性能, 对TSV-Cu进行了Berkovich纳米压痕实验. 基于Oliver-Pharr算法和连续刚度法确定TSV-Cu的弹性模量和硬度分别为155.47 GPa和2.47 GPa; 采用有限元数值模拟对纳米压痕加载过程进行反演分析, 通过对比最大模拟载荷与最大实验载荷, 确定TSV-Cu的特征应力和特征应变; 由量纲函数确定的应变强化指数为0.4892; 将上述实验结果代入幂强化模型中, 确定TSV-Cu的屈服强度为47.91 MPa. 最终确定了TSV-Cu的幂函数型弹塑性应力-应变关系.
秦飞 , 项敏 , 武伟 . 纳米压痕法确定TSV-Cu的应力-应变关系*[J]. 金属学报, 2014 , 50(6) : 722 -726 . DOI: 10.3724/SP.J.1037.2013.00782
In 3D electronic package technologies, through silicon via (TSV) plays a critical important role. TSVs are usually fully filled by electroplating copper, namely TSV-Cu, which has very different mechanical properties from bulk copper. To obtain the mechanical properties of the TSV-Cu, the Berkovich nanoindentation tests were conducted, and the Oliver-Pharr algorithm and the continuous stiffness measurement method were used to acquire the elastic modulus and hardness. Then finite element modeling (FEM) simulations are adopted for reverse analysis of the nanoindentation loading process to determine the representative stress and strain of the TSV-Cu by comparing the maximum value of simulated load to that of experimental load. The strain hardening exponent of the TSV-Cu is determined by dimension functions. The yield strength of the TSV-Cu is acquired by substituting the representative stress, the representative strain and the strain hardening exponent into a power law stress-strain constitution. Finally, a power law elastic-plastic stress-strain relationship of TSV-Cu is built. The obtained elastic modulus and hardness of the TSV-Cu are 155.47 GPa and 2.47 GPa, respectively; the strain hardening exponent is 0.4892 and the yield strength is 47.91 MPa.
Key words: TSV-Cu; nanoindentation; elastic modulus; yield strength; strain hardening exponent
| [1] | Qin F, Wang J, Wan L X, Yu D Q, Cao L Q, Zhu W H. Semicond Technol, 2012; 37: 825 |
| [1] | (秦飞, 王珺, 万里兮, 于大全, 曹立强, 朱文辉. 半导体技术, 2012; 37: 825) |
| [2] | Wu B, Kumar A, Pamarthy S. J Appl Phys, 2010; 108: 051101 |
| [3] | Ege E S, Shen Y L. J Electron Mater, 2003; 32: 1000 |
| [4] | Shen Y L, Ramamurty U. J Appl Phys, 2003; 93: 1806 |
| [5] | Okoro C, Vanstreels K, Labie R, Lühn O, Vandevelde B, Verlinden B, Vandepitte D. J Micromech Microeng, 2010; 20: 045032 |
| [6] | Xu L, Dixit P, Miao J, Pang J H L, Zhang X, Tu K N, Preisser R. Appl Phys Lett, 2007; 90: 033111 |
| [7] | Dixit P, Xu L, Miao J, Pang J H L, Preisser R. J Micromech Microeng, 2007; 17: 1749 |
| [8] | Li J Y, Wang H, Wang S, Wang H Y, Cheng P, Zhang Z J, Ding G F. J Fudan Univ (Nat Sci), 2012; 51: 184 |
| [8] | (李君翊, 汪红, 王溯, 王慧颖, 程萍, 张振杰, 丁桂甫. 复旦学报(自然科学版), 2012; 51: 184) |
| [9] | Li Y S, Wang W. Acta Metall Sin, 2010; 46: 1098 |
| [9] | (黎业生, 汪伟. 金属学报, 2010; 46: 1098) |
| [10] | Wang F J, Qian Y Y, Ma X. Acta Metall Sin, 2005; 41: 775 |
| [10] | (王凤江, 钱乙余, 马鑫. 金属学报, 2005; 41: 775) |
| [11] | Ma Y, Yao X H, Tian L H, Zhang X Y, Shu X F, Tang B. Acta Metall Sin, 2011; 47: 321 |
| [11] | (马 永, 姚晓红, 田林海, 张翔宇, 树学峰, 唐宾. 金属学报, 2011; 47: 321) |
| [12] | Dao M, Chollacoop N, Van Vliet K J, Venkatesh T A, Suresh S. Acta Mater, 2001; 49: 3899 |
| [13] | Tabor D. The Hardness of Metals. London: Oxford University Press, 1951: 120 |
| [14] | Choi Y, Lee H S, Kwon D. J Mater Res, 2004; 19: 3307 |
| [15] | Pethica J B, Oliver W C. Phys Scr, 1987; 19: 61 |
| [16] | Oliver W C, Pharr G M. J Mater Res, 1992; 7: 64 |
| [17] | Pharr G M, Oliver W C. J Mater Res, 1992; 7: 613 |
| [18] | Antunes J M, Fernandes J V, Menezes L F, Chaparro B M. Acta Mater, 2007; 55: 69 |
| [19] | Lee J, Lee C, Kim B. Mater Des, 2009; 30: 3395 |
| [20] | Read D T, Cheng Y W, Geiss R. Microelectron Eng, 2004; 75: 63 |
| [21] | Xiang Y, Chen X, Vlassak J J. Mater Res Soc Symp Proc, 2002; 695: 189 |
| [22] | |
| [23] | Ranganathan N, Prasad K, Balasubramanian N, Pey K L. J Micromech Microeng, 2008; 18: 075018 |
| [24] | Shin H A S, Kim B J, Kim J H, Hwang S H, Budiman A S, Son H Y, Byun K Y, Tamura N, Kunz M, Kim D I K, Joo Y C. J Electron Mater, 2012; 41: 712 |
| [25] | Okoro C, Labie R, Vanstreels K, Franquet A, Gonzalez M, Vandevelde B, Beyne E,Vandepitte D, Verlinden B. J Mater Sci, 2011; 46: 3868 |
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