|
|
纳米压痕法确定TSV-Cu的应力-应变关系* |
秦飞, 项敏, 武伟 |
北京工业大学机械工程与应用电子技术学院, 北京100124 |
|
THE STRESS-STRAIN RELATIONSHIP OF TSV-Cu DETERMINED BY NANOINDENTATION |
QIN Fei, XIANG Min, WU Wei |
College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing 100124 |
引用本文:
秦飞, 项敏, 武伟. 纳米压痕法确定TSV-Cu的应力-应变关系*[J]. 金属学报, 2014, 50(6): 722-726.
Fei QIN,
Min XIANG,
Wei WU.
THE STRESS-STRAIN RELATIONSHIP OF TSV-Cu DETERMINED BY NANOINDENTATION[J]. Acta Metall Sin, 2014, 50(6): 722-726.
[1] |
Qin F, Wang J, Wan L X, Yu D Q, Cao L Q, Zhu W H. Semicond Technol, 2012; 37: 825
|
[1] |
(秦飞, 王珺, 万里兮, 于大全, 曹立强, 朱文辉. 半导体技术, 2012; 37: 825)
|
[2] |
Wu B, Kumar A, Pamarthy S. J Appl Phys, 2010; 108: 051101
|
[3] |
Ege E S, Shen Y L. J Electron Mater, 2003; 32: 1000
|
[4] |
Shen Y L, Ramamurty U. J Appl Phys, 2003; 93: 1806
|
[5] |
Okoro C, Vanstreels K, Labie R, Lühn O, Vandevelde B, Verlinden B, Vandepitte D. J Micromech Microeng, 2010; 20: 045032
|
[6] |
Xu L, Dixit P, Miao J, Pang J H L, Zhang X, Tu K N, Preisser R. Appl Phys Lett, 2007; 90: 033111
|
[7] |
Dixit P, Xu L, Miao J, Pang J H L, Preisser R. J Micromech Microeng, 2007; 17: 1749
|
[8] |
Li J Y, Wang H, Wang S, Wang H Y, Cheng P, Zhang Z J, Ding G F. J Fudan Univ (Nat Sci), 2012; 51: 184
|
[8] |
(李君翊, 汪红, 王溯, 王慧颖, 程萍, 张振杰, 丁桂甫. 复旦学报(自然科学版), 2012; 51: 184)
|
[9] |
Li Y S, Wang W. Acta Metall Sin, 2010; 46: 1098
|
[9] |
(黎业生, 汪伟. 金属学报, 2010; 46: 1098)
|
[10] |
Wang F J, Qian Y Y, Ma X. Acta Metall Sin, 2005; 41: 775
|
[10] |
(王凤江, 钱乙余, 马鑫. 金属学报, 2005; 41: 775)
|
[11] |
Ma Y, Yao X H, Tian L H, Zhang X Y, Shu X F, Tang B. Acta Metall Sin, 2011; 47: 321
|
[11] |
(马 永, 姚晓红, 田林海, 张翔宇, 树学峰, 唐宾. 金属学报, 2011; 47: 321)
|
[12] |
Dao M, Chollacoop N, Van Vliet K J, Venkatesh T A, Suresh S. Acta Mater, 2001; 49: 3899
|
[13] |
Tabor D. The Hardness of Metals. London: Oxford University Press, 1951: 120
|
[14] |
Choi Y, Lee H S, Kwon D. J Mater Res, 2004; 19: 3307
|
[15] |
Pethica J B, Oliver W C. Phys Scr, 1987; 19: 61
|
[16] |
Oliver W C, Pharr G M. J Mater Res, 1992; 7: 64
|
[17] |
Pharr G M, Oliver W C. J Mater Res, 1992; 7: 613
|
[18] |
Antunes J M, Fernandes J V, Menezes L F, Chaparro B M. Acta Mater, 2007; 55: 69
|
[19] |
Lee J, Lee C, Kim B. Mater Des, 2009; 30: 3395
|
[20] |
Read D T, Cheng Y W, Geiss R. Microelectron Eng, 2004; 75: 63
|
[21] |
Xiang Y, Chen X, Vlassak J J. Mater Res Soc Symp Proc, 2002; 695: 189
|
[22] |
|
[23] |
Ranganathan N, Prasad K, Balasubramanian N, Pey K L. J Micromech Microeng, 2008; 18: 075018
|
[24] |
Shin H A S, Kim B J, Kim J H, Hwang S H, Budiman A S, Son H Y, Byun K Y, Tamura N, Kunz M, Kim D I K, Joo Y C. J Electron Mater, 2012; 41: 712
|
[25] |
Okoro C, Labie R, Vanstreels K, Franquet A, Gonzalez M, Vandevelde B, Beyne E,Vandepitte D, Verlinden B. J Mater Sci, 2011; 46: 3868
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
|
Shared |
|
|
|
|
|
Discussed |
|
|
|
|