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金属学报  2000, Vol. 36 Issue (11): 1201-1204     
  论文 本期目录 | 过刊浏览 |
离子束溅射制备立方C-N化合物
王天生 于栋利
中国科学院物理研究所;北京 100080
引用本文:

王天生; 于栋利 . 离子束溅射制备立方C-N化合物[J]. 金属学报, 2000, 36(11): 1201-1204 .

全文: PDF(141 KB)  
摘要: 用氮离子束分别原位溅射Ti和石墨靶的方法制备了CNx/TiNy多层膜. 用X射线光电子谱分析CNx层中C和N的键合状态, 用透射电镜观察薄膜中的相形貌, 用电子衍射和X射线衍射的方法分析相的结构. 结果表明, CNx层中主要有N-sp^2C和N-sp^3C两种键合状态, 薄膜中观察到的C-N化合物尺寸为10-60nm的晶体颗粒, 其衍射数据可用立方C3N4结构标定, 证实了该薄膜中存在立方C3N4化合物.
关键词 C-N化合物离子束溅射    
Key words
收稿日期: 1999-11-15     
ZTFLH:  TB43 TB321  
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