浸蚀促进BaTiO3单晶的畴变和裂纹扩展的研究

金属学报

2005, Vol. 41

Issue (3): 297-301

论文

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浸蚀促进BaTiO3单晶的畴变和裂纹扩展的研究

王瑞敏;褚武扬;宿彦京;高克玮;乔利杰

北京科技大学材料物理系; 北京100083

Domain switching and indentation crack propagating in BaTiO3 single crystal induced by etching

WANG Ruimin; CHU Wuyang; SU Yanjing; GAO Kewei; QIAO Lijie

Department of Materials Physics; University of Science & Technology Beijing; Beijing 100083

引用本文:

王瑞敏; 褚武扬; 宿彦京; 高克玮; 乔利杰 . 浸蚀促进BaTiO3单晶的畴变和裂纹扩展的研究[J]. 金属学报, 2005, 41(3): 297-301 .
, , , , . Domain switching and indentation crack propagating in BaTiO3 single crystal induced by etching[J]. Acta Metall Sin, 2005, 41(3): 297-301 .

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摘要: //金属学报.¾2005, 41(3).¾ 297~301 研究了浸蚀对极化和未极化的BaTiO3单晶中畴变和压痕裂纹扩展的影响. 结果表明, 对面内极化试样(即极化方向[001], 压痕面(100)), 用HCl+HF水溶液浸蚀20 s, 其压痕裂纹的平均长度由(140±17)μm扩展至(211±26)μm, 即增长50%, 同时压痕裂纹所围的90畴变区也明显增大; 先浸蚀再打压痕和压痕后再浸蚀所得的结果相同. 其原因和浸蚀剂分子吸附降低表面能有关. 对离面极化试样(即压痕面(001)垂直于极化方向[001]), 则浸蚀对其裂纹长度和畴变区基本没有影响. 对未极化试样, 浸蚀使其裂纹长度从(150±21)μm增至(182±30)μm, 即增长约20%, 同时畴变区亦增大.

关键词 ： BaTiO3单晶, 浸蚀, 畴变

Abstract：Etching-enhanced 90º domain switching and indentation crack propagating in BaTiO3 single crystal have been investigated using poled and unpoled samples, respectively. The results show that if the poled direction [001] lies in the (100) indentation plane, etching in HCl+HF solution causes the average length of 16 indentation cracks to increase from (140±17)μm to (211±26)μm, i.e., 50% increment. At the same time, the 90º domain switching zones surrounded by the indentation cracks increase also evidently after etching. The reason is due to chemisorption of etching molecular decreasing surface energy. If Vicker's indention is carried out in the pre-etched surface, the average crack length and the size of the domain switching zones are the same with those of etching after indentation. If the [001] poling direction is normal to the indentation plane, there is no effect of etching on the domain switching zone and crack length. For unpoled sample, etching increases the domain switching zone and the crack length from (150±21) μm to (182±30) μm, i.e., about 20% increment.

Key words： BaTiO3 single crystal etching domain switching

收稿日期: 2004-04-05

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[1] Busche M J, Hsia K J. Scr Mater, 2001; 44: 207
[2] Fang F, Yang W. Mater Lett, 2002; 57: 198
[3] Yang W. Mechatronic Reliability. Beijing: Tsinghua University Press, 2001: 96 (杨卫.力电失效学.北京:清华大学出版社, 2001:96)
[4] Geramita A V, Seberry J. Orthogonal Designs: Quadratic Forms and Hadamard Matrices. New York: Marcel Dekker, 1979
[5] Wang R M, Chu W Y, Gao K W, Su Y J, Qiao L J. Mater Lett, 2004; 58: 1811
[6] Wang Y, Chu W Y , Su Y J, Qiao L J. Mater Sci Eng, 2002; B59: 263
[7] Chantikul P, Anstis G R, Lawn B R, Marshall D B. J Am Ceram Soc, 1981; 64: 539
[8] Chu W Y, Qiao L J, Chen Q Z, Gao K W. Fracture and Environment Fracture. Beijing: Science Press, 2000: 10 (褚武扬,乔利杰,陈奇志,高克玮.断裂与环境断裂.北京: 科学出版社,2000:10)

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