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金属学报  1966, Vol. 9 Issue (2): 208-244    
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用蝕坑法研究硅鋼片中晶粒取向与成长
戴礼智;林毓东
A STUDY OF GRAIN ORIENTATION AND GROWTH IN IRON-SILICON BY ETCH PATTERNS
TAI LI-CHI; LIN Y-TUNG
引用本文:

戴礼智;林毓东. 用蝕坑法研究硅鋼片中晶粒取向与成长[J]. 金属学报, 1966, 9(2): 208-244.
, . A STUDY OF GRAIN ORIENTATION AND GROWTH IN IRON-SILICON BY ETCH PATTERNS[J]. Acta Metall Sin, 1966, 9(2): 208-244.

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摘要: 用金相深腐蚀法研究含硅3.25与3.45%的钢片的再结晶位向,并用X射线极图法与光学测角仪作为辅助工具。从金相照片中观察到再结晶织构(100)[011],(110)[001],(100)[001]及(111)[112]的蚀坑。 实验结果指出,中间退火温度和最后退火温度对硅钢片最后晶粒位向有显著影响。立方织构可以由样品的初次再结晶或二次再结晶形成。加强立方织构不仅要升高退火温度,也须调节升到最后温度的时间。
Abstract:An investigation of the recrystallization orientation and growth in iron-silicon alloys containing 3.25 and 3.45 percent silicon has been made by using the etch patterns. The experimental results showed that the temperatures of intermediate and final annealing affected the end orientation. The cube texture in the specimens could be developed either through primary recrystallization or through secondary recrystallization. It has also been found that the cube texture was intensified not only by raising the annealing temperature, but also regulating the duration required for reaching the final temperature.
收稿日期: 1966-02-18     
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