金属学报  1984, Vol. 20 Issue (5): 371-456

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重掺Te的GaAs单晶缺陷观察中的立体腐蚀

高维滨

中国科学院半导体研究所

A STEREO-ETCHING FOR OBSERVATION OF DEFECTS IN HEAVILY Te-DOPED GaAs CRYSTAL

GAO Weibin (Institute of Semiconductors; Academia Sinica; Beijing)(Manuscript received 4 July; 1983)

高维滨. 重掺Te的GaAs单晶缺陷观察中的立体腐蚀[J]. 金属学报, 1984, 20(5): 371-456.
. A STEREO-ETCHING FOR OBSERVATION OF DEFECTS IN HEAVILY Te-DOPED GaAs CRYSTAL[J]. Acta Metall Sin, 1984, 20(5): 371-456.

摘要 参考文献 相关文章 Metrics 全文: PDF(1727 KB)   摘要: 用A/B腐蚀剂在重掺Te的GaAs单晶缺陷观察中发现,可以根据金相表面的腐蚀图形定性判断出位错线与金属表面的距离。据此本文提出了“立体腐蚀”的概念,阐明了“立体腐蚀”的原理。 用“立体腐蚀”的方法观察了螺旋管位错及船形坑。证明了螺旋管位错的一环或一个位错环可以对应于一个船形坑。 Abstract：The defects in the heavily Te-doped GaAs crystals were observed under optical microscope using A/B etchant. It showed that the distance from the dislocation line to metallographic etched surface may be qualitatively ascertained on the basis of the etched figure on the specimen surface. Thus, to make an approach to concept of "stereo-etching" was tried and its principle was also discussed. After observation on the helicoidal dislocation and boat pit by means of "stereo-etching", it was confirmed that a boat pit is in correspondence with either one pitch of helicoidal dislocation or an individual dislocation loop. 收稿日期: 1984-05-18      服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 高维滨 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y1984/V20/I5/371 1 Abrahams, M. S. ; Buiocchi, C. J. , J. Appl. Phys. , 36 (1965) , 2855． 2 Stirland, D. J. ; Ogden, R. , Phys. Status Solidi, (a) 17 (1973) , k1． 3 Shifrin, S. S. ; Milvidskii, M. G. ; Osvenskii, V. B. , Soviet Phys. Crystall. , 27 (1982) , 428． 4 Stirland, D. J. ; Straughan, B. W. , Thin Solid Films, 31 (1976) , №1/2, 139． 5 Huber, A. M. ; Champier, G. , Proc. 3rd Int. Symp. on Gallium Arsenide and Related Compounds, 1970, Inst. Phys. , London, 1971, p. 118 No related articles found! Viewed Full text Abstract Cited   Shared      Discussed