金属学报  1985, Vol. 21 Issue (4): 89-94

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某些非晶态合金的电阻率-温度特性

冯本政;杨汝森

昆明贵金属研究所;昆明贵金属研究所

TEMPERATURE DEPENDENCE OF ELECTRICAL RESISTIVITY OF SOME AMORPHOUS ALLOYS

FENG Benzheng;YANG Rusen Institute of Precious Metals Kunming

冯本政;杨汝森. 某些非晶态合金的电阻率-温度特性[J]. 金属学报, 1985, 21(4): 89-94.
, . TEMPERATURE DEPENDENCE OF ELECTRICAL RESISTIVITY OF SOME AMORPHOUS ALLOYS[J]. Acta Metall Sin, 1985, 21(4): 89-94.

摘要 参考文献 相关文章 Metrics 全文: PDF(375 KB)   摘要: 本文测量了由液态急冷技术制备的Zr_(100-x)Mx(M=Fe,Co,Ni,Cu和Pd),CU_(100-x)Ti_x和Pd_(83.5-x)Si_(16.5)M_x(M=Cu,Ag,Ni,Pt,Rh,Ru,Ir,Os,Hf,Ta,W和Re)以及Pd_(80-x)Si_(20)Cr_x等非晶态合金的室温电阻率ρ,和在0—500℃范围内的电阻率-温度特性.并确定了各个合金玻璃的电阻率温度系数α和各个结晶阶段的转变温度(T_1,T_2,T_3,和T_5)以及微量添加元素对它们的影响. Abstract：Measurements of the electrical resistivity,its temperature dependence and the tran-sition temperatures at different stages of some amorphous alloys,such as Zr_(100-x)M_x(M=Fe,Co,Ni,Cu or Pd),Cu_(100-x)Ti_x,Pd_(83.5-x)Si_(16.5)M_x(M=Cu,Ag,Ni,Pt,Rh,Ru,Ir,Os,Hf,Ta,W or Re)and Pd_(80-x)Si_(20)Cr_x prepared by the meltspinningtechnique were made in the temperature range of 0—500℃.The effects of minoradditives on them are also discussed. 收稿日期: 1985-04-18      服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 冯本政 杨汝森 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y1985/V21/I4/89 1 Gallagher,B.L.;Greig,D.;J.Phys.,F.12(1982) ,1721． 2 Budhani,R.C.;Goel,T.C.;Chopra,K.L.,J.Phys.,F,13(1983) ,129． 3 Bushow,K.H.J.;Beekman,N.M.,Phys.Rev.,B,19(1979) ,3843． 4 Fritsch,G.;Willer,J.;Luescher,E.,J.Non-Cryst.Solids,46(1981) ,321． 5 Hwang,C.H.,J.Less-Common Met.,86(1982) ,187． 6 冯本政;朱应华;杨汝森,金属学报,20(1984) ,B 224． No related articles found! Viewed Full text Abstract Cited   Shared      Discussed