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金属学报  1993, Vol. 29 Issue (4): 77-80    
  论文 本期目录 | 过刊浏览 |
离子束辅助沉积合成B—N薄膜的分析
江海;陶琨;李恒德
清华大学材料科学与工程系;讲师;北京100084;清华大学;清华大学
PREPARATION OF B-N FILMS BY ION BEAM ASSISTED DEPOSITION
JIANG Hai;TAO Kun;LI Hengde Tsinghua University. Beijing lecturer;Department of Materials Science and Engineering;Tsinghua University; Beijing 100084
引用本文:

江海;陶琨;李恒德. 离子束辅助沉积合成B—N薄膜的分析[J]. 金属学报, 1993, 29(4): 77-80.
, , . PREPARATION OF B-N FILMS BY ION BEAM ASSISTED DEPOSITION[J]. Acta Metall Sin, 1993, 29(4): 77-80.

全文: PDF(430 KB)  
摘要: 用离子束辅助沉积(IBAD)技术合成氮化硼薄膜,红外吸收谱和透射电镜的观测结果显示,薄膜含有c—BN和h—BN相薄膜Knoop硬度值高达35GPa。逐层剥离的AES谱结果表明,薄膜表面存在氮离子的注入效应,薄膜由注入层、成分均匀层和离子束混合过渡层组成
关键词 离子束辅助沉积氮化硼薄膜    
Abstract:BN films, synthesized by ion beam assisted deposition, were analysed by RBS,AES, IR spectra and TEM. Formation of c-BN phase was shown not only by IR spectra atabsorption peak of 1100 cm~(-1), but also by electron diffraction pattern. The results of AESdemonstrate an effect of N~+ implantation near the film surface. The deposited films consist ofthree layers, i.e., ion implantation layer, film layer and mixed intermediate layer, according tothe difference of concentration. The micro-Knoop hardess of the film is 25-35 GPa.
Key wordsion beam assisted deposition    BN film
收稿日期: 1993-04-18     
1 Satou M, Yamaguchi K, Andoh Y, Suzuki Y, Matsuda K, Fujinoto F. Nucl Instrum Methods Phys Res. 1985; B7/Tetreault T G, Hirvonen J K, 8: 910
2 Halverson W D, Tetreault T G, Hirvonen J K. Mater Sci Forum, 1990; 54/55: 71
3 Chu W K, Mayer J W, Nicolet M A. Backscattering spectrometry. Newyork: Academic Press, 1978
4 Verinaud F, Weissmantel E, Grenier I, Celerier A, Machet J, Weissmantel S. Thin Solid Films, 1992: 209: 59
5 Sainty W G, Martin P J, Netterfield R P, Mckenzie D R, Cockayne D J H, Dwarte D M. J Appl Phys, 1988; 64: 3980
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