对向靶溅射TiN薄膜的结构和物性

金属学报

1995, Vol. 31

Issue (13): 31-34

论文

本期目录 | 过刊浏览

对向靶溅射TiN薄膜的结构和物性

刘裕光;姜恩永;程启;孙长庆

天津大学

STRUCTURE AND PROPERTIES OF TiN FILMS PREPARED BY FACING TARGETS SPUTTERING

LIU Yuguang; JIANG Enyong; CHENG Qi; SUN Changqing (Department of physics.Tianjin University. Tianjin 300072)(Manuscript received; 94-04-07)

引用本文:

刘裕光;姜恩永;程启;孙长庆. 对向靶溅射TiN薄膜的结构和物性[J]. 金属学报, 1995, 31(13): 31-34.
, , , . STRUCTURE AND PROPERTIES OF TiN FILMS PREPARED BY FACING TARGETS SPUTTERING[J]. Acta Metall Sin, 1995, 31(13): 31-34.

全文: PDF(274 KB)

摘要: 利用对向靶溅射（ＦＴＳ）沉积出（１１１）择优取向的单相ＴｉＮ膜，膜硬度（ＨＶ）最高可达３８００，择优取向随基板偏压增高，可由（１１１）转向（２００），晶格常数随氮气分压增高而增大，这是氮原子进入四面体间隙引起的。

关键词 ：ＴｉＮ薄膜, 对向靶溅射, 织构系数

Abstract：The hardness (HV) of one of single-phase and (111) preferred orientation TiN films that were prepared by facing targets sputtering (FTS), is as high as 3800, the preferred orientation can change from ( 111 ) to (200) with the increase of substrate bias voltage, the lattice parameters vary with the pressure ratio of N_2 to Ar, the lattice expansion can be explained by the mechanism of interstitial N atom into the tetrahedral hole. Correspondent: LIU Yuguang. Lecturer, Department of physics, Tianjin University. Tianjin 300072

Key words： TiN thin films facing targets sputtering texture cofficident

	服务

	把本文推荐给朋友
	加入引用管理器
	E-mail Alert
	RSS
	作者相关文章
	刘裕光
	姜恩永
	程启
	孙长庆
44.8K

链接本文:

https://www.ams.org.cn/CN/ 或 https://www.ams.org.cn/CN/Y1995/V31/I13/31

1SundgrenJE．ThinSolidFilms,1985;128:212ValvodaV,KuzzlR,CernyR．ThinSolidFilms,1988:156:533孙长庆,姜恩永,刘裕光．天津大学学报,1889:4:934PerryAJ．ThinSolidFilms,1986:135:735McguireTR．JApplPhys,1977;48:76NicoletMA．ThinSolidFilms,1973;52:4157BunshanRF、NimmagaddaR,DunfordW．ThinSolidFilms,1978;54:858刘国纯,卞恒正．硬质合金,1991;8(2):20x

[1]	时惠英, 杨超, 蒋百灵, 黄蓓, 王迪. 双脉冲磁控溅射峰值靶电流密度对TiN薄膜结构与力学性能的影响[J]. 金属学报, 2018, 54(6): 927-934.
[2]	李铸国; 华学明; 吴毅雄; 三宅正司 . 低能离子束辅照对溅射镀TiN膜生长的影响[J]. 金属学报, 2005, 41(10): 1087-1090 .
[3]	王合英;姜恩永;白海力;吴萍;刘明升. 掺杂Ti对Fe-N薄膜结构与磁性的影响[J]. 金属学报, 1996, 32(11): 1199-1203.
[4]	刘长清;李美栓;金柱京;吴维(山文). 精细TiN陶瓷薄膜的抗拉强度和界面结合强度[J]. 金属学报, 1992, 28(9): 91-94.
[5]	王曦;杨根庆;柳襄怀;郑志宏;黄巍;周祖尧;邹世昌. 氮气辅助氙离子束增强沉积TiN薄膜及其机械性能[J]. 金属学报, 1992, 28(3): 87-91.
[6]	周建坤;柳襄怀;陈酉善;王曦;郑志宏;黄巍;邹世昌. TiN薄膜的合成及其性能研究[J]. 金属学报, 1990, 26(2): 136-141.

Viewed

Full text

Abstract

Cited

Shared

Discussed