金属学报  2008, Vol. 44 Issue (6): 647-651

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高浓度臭氧在分子束外延法制备Bi系氧化物薄膜中的应用

张炳森;于晓明;孙霞光;李茂林;张彩碚;祁阳

东北大学理学院

THE APPLICATION OF HIGH-CONCENTRATION OZONE IN THE PREPARATION OF BI-BASED OXIDE THIN FILMS BY MOLECULAR BEAM EPITAXY

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东北大学理学院

张炳森; 于晓明; 孙霞光; 李茂林; 张彩碚; 祁阳 . 高浓度臭氧在分子束外延法制备Bi系氧化物薄膜中的应用[J]. 金属学报, 2008, 44(6): 647-651 .
, , , , , . THE APPLICATION OF HIGH-CONCENTRATION OZONE IN THE PREPARATION OF BI-BASED OXIDE THIN FILMS BY MOLECULAR BEAM EPITAXY[J]. Acta Metall Sin, 2008, 44(6): 647-651 .

摘要 参考文献 相关文章 Metrics 全文: PDF(1125 KB)   摘要: 利用硅胶吸附--解吸臭氧原理自制了臭氧浓缩装置, 通过此装置制备的高浓度臭氧作为分子束外延制备Bi系氧化物薄膜的氧化源. 在臭氧浓缩装置中, 硅胶温度保持在-85℃左右, 工作6 h, 可获得浓度(摩尔分数)高于95%的臭氧. 当臭氧浓缩装置中压强保持在1.3×10　3　Pa, 该臭氧浓度可维持5 h以上. X射线衍射结果表明, 制备的高浓度臭氧在高真空条件下可将Cu氧化成CuO, 并以此为氧化源利用分子束外延在MgO(100)衬底上制备了较高质量的 Bi2Sr2CuO6+x和Bi2Sr2CaCu2O8+x薄膜. 关键词 ： 臭氧,  浓缩装置,  Bi系氧化物薄膜,  分子束外延     Abstract：A homemade ozone concentrating apparatus was devised and prepared, and the high-concentration ozone was prepared as oxide source for the preparation of Bi-based oxide thin films by molecular beam epitaxy. Silica gel was used to adsorb ozone which was made by ozone generator, and ozone with the concentration about 95 mol% can be obtained when the silica gel was kept at about -85℃ for 6 hours. And the concentration of ozone can be kept over 5 hours when the pressure of concentrating apparatus was kept at 1.3×103Pa. The X-ray diffraction patterns demonstrated that the high-concentration ozone gotten by the ozone concentrating apparatus can oxidize Cu to CuO in high vacuum. Furthermore, the oxide source was good enough to prepare high quality Bi2Sr2CuO6+x and Bi2Sr2CaCu2O8＋x thin films on the MgO(100) substrates by molecular beam epitaxy. Key words： ozone    concentrating apparatus    Bi-based oxide thin films    molecular beam epitaxy（MBE） 收稿日期: 2007-11-08      ZTFLH:  TN405.984   服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 张炳森 于晓明 孙霞光 李茂林 张彩碚 祁阳 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y2008/V44/I6/647 [1]Bove P,Rogers D J,Hosseini Teherani F.J Cryst Growth, 2000;220:68 [2]Brazdeikis A,Karlsson U O,FlodstrSm A S.Thin Solid Films,1996;281-282:57 [3]Schlom D G,Marshall A F,Sizemore J T,Chen Z J,Eck- stein J N,Bozovic I,Von Dessonneck K E,Harris J S Jr, Bravman J C.J Cryst Growth,1990;102:361 [4]Nakayama Y,Tsukada I,Uchinokura K.J Appl Phys, 1991;70:4371 [5]Qi Y,Sakai K,Murakami H,Ito T.Appl Surf Sci,2001; 169-170:335 [6]Ingrey S,Lau W M,Mclntyre N S.J Vac Sci Technol 1986;4A:984 [7]Halder S,Schneller T,Meyer R,Waser R.J Appl Phys. 2005;97:114904 [8]Hosokawa S,Ichimura S.Rev Sci lnstrum,1991;62:1614 [9]Gibbons B J,Fan Y,Findikoglu A T,Jia Q X,Reagor D W.J Vac Sci Technol,2001;19A:56 [10]Kubinski D J,Hoffman D W,Soltis R E,Logothetis E M J Appl Phys,1992;71:1860 [11]Reidy S,Varhue W J,Lavoie M,Mongeon S,Adams E.J Vac Sci Technol,2003;21B:970 [12]Koike K,Fukuda T,Ichimura S,Kurokawa A.Rev Sci lnstrum,2000;71:4182 [13]Huang Y E,Jia J F.Hebei Chem Eng lud,2006;(2):6 (黄艳娥，贾俊芳，河北化工，2006；(2)：6) [14]Chen Y M,Ling Y M.Chin J Electron Devices,2004;27 653 (陈艳梅，凌一鸣．电子器件，2004；27：653) [15]Hanson D,Mauersberger K.J Chem Phys,1985;83:326 [16]Hanson D,Mauersberger K.J Chem Phys,1986;85:4669 [17]Cook G A,Kiffer A D,Klumpp C V,Malik A H,Spence L A.In:Leedy H A ed.,Advances in Chemistry Series, American Chemical Society,Washington,DC,1956:44 [18]Caprio V,Lignola P G,Insola A.Anal Chem,1980;52: 1123 [19]Streng A G.J Chem Eng Data,1961;6:431 [1] 张炳森 李茂林 王晶晶 孙本哲 祁阳. Bi2Sr2CaCu2O8+δ薄膜的分子束外延法制备及结晶性[J]. 金属学报, 2009, 45(6): 663-672. Viewed Full text Abstract Cited   Shared      Discussed