金属学报  2008, Vol. 44 Issue (12): 1415-1418

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Zr50Cu50合金过冷熔体中的晶体生长速度

王强;马明臻;张新宇;刘日平

燕山大学亚稳材料制备技术与科学国家重点实验室

CRYSTAL GROWTH VELOCITY IN UNDERCOOLED Zr50Cu50 ALLOY MELT

WANG Qiang;MA Mingzhen;ZHANG Xinyu;LIU Riping

State Key Laboratory of Metastable Materials Science & Technology; Yanshan University

王强 马明臻 张新宇 刘日平 . Zr50Cu50合金过冷熔体中的晶体生长速度[J]. 金属学报, 2008, 44(12): 1415-1418.
, , , . CRYSTAL GROWTH VELOCITY IN UNDERCOOLED Zr50Cu50 ALLOY MELT[J]. Acta Metall Sin, 2008, 44(12): 1415-1418.

摘要 参考文献 相关文章 Metrics 全文: PDF(650 KB)   摘要:  利用静电悬浮设备成功地实现了Zr50Cu50合金熔体的深过冷与凝固, 并测得了在近200 K的过冷度范围内的晶体生长速度. 随过冷度的增加, 初生ZrCu相的晶体生长速度几乎呈线性增大, 但在整个测量的过冷度范围之内, 其生长速度极低, 比一般的金属、Si和Ge等的生长速度低两个数量级以上. 关键词 ： Zr50Cu50合金,  过冷凝固,  晶体生长速度     Abstract： Zr50Cu50 melt was undercooled successfully by using electrostatic levitation. Through combination with a high speed camera, the growth velocity of the ZrCu primary phase in the undercooled melt was measured. It was found that the growth velocity increases almost linearly with undercooling, but is extremely low, at least 2 orders lower than those of the normal metals, Si and Ge. Key words： Zr50Cu50 alloy    undercooled solidification    crystal growth velocity 收稿日期: 2008-04-24      ZTFLH:  TG111.4   基金资助: 国家自然科学基金项目50731005; 服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 王强 马明臻 张新宇 刘日平 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y2008/V44/I12/1415 [1]Schleip E,Willnecker R,Herlach D M,G(?)erler G P.Mater Sci Eng,1988;98:39 [2]Herlach D M.Annu Rev Mater Sci,1991;21:23 [3]Panofen C,Herlach D M.Mater Sci Eng,2007;A449-451: 699 [4]Galenko P K,Reutzel S,Herlach D M,Danilov D,Nestler B.Acta Mater,2007;55:6834 [5]Willnecker R,Herlach D M,Feuerbache B.Phys Rev Lett, 1989;62:12707 [6]Aoyama T,Paradis P,Ishikawa T,Yoda S.Mater Sci Eng, 2004;A375-377:460 [7]Li D L,Volkmann T.Eckler K,Herlach D M.J Crystal Growth,1995;152:101 [8]Li D,Herlach D M.Phys Rev Lett,1996;77:1801 [9]Eckler K,Norman F A,G(?)rtner F,Greet A L,Herlach D M.J Crystal Growth,1997;1-3:528 [10]Eckler K,Cochrane R F,Herlach D M,Feuerbacher B. Mater Sci Eng,1991;A133:702 [11]Barth M,Eckler K,Herlach D M.Mater Sci Eng,1991; A133:790 [12]Zhang J Y,Wang H R,Shi Z Q,Teng X Y,Ye Y F,Min G H.J Mater Sci Eng,2002;20:461 (张均艳，王焕荣，石志强．腾新营，叶以富，闵光辉．材料科学与工程，2002；20：461) [13]Wu N Q,Su L Z,Yuan M Y.Mater Sci Eng,1998;A257: 357 [14]Saida J,Matsushita M.J Mater Sci,2000;35:3539 [15]Ahounian Z,Tu G H,Strom-Olsen J O.J Appl Phys, 1982;53:4755 [16]Wang N,Li C,Du Z,Wang F,Zhang W.Comput Coupl Phase Diag Thermochem,2006;30:461 [17]Wang W H,Lewandowski J J,Greet A L.J Mater Res, 2005;20:2307 [18]Wang D,Li Y,Sun B B,Sui M L,Lu K,Ma E.Appl Phys Lett,2004;84:4029 [19]Fan G J,Fecht H,Lavemia E J.Appl Phys Lett,2004;84: 487 [20]Kawamura Y,Inoue A.Appl Phys Lett,2000;77:1114 [21]Turnbull D.ConCern Phys,1969;10:473 [22]Fan G L,Freels M,Choo H,Liaw P K,Li J J Z,Rhim W K,Johnson W L,Yu P,Wang W H.Appl Phys Lett,2006; 89:241917 [23]Ngai K L.J Phys Chem,1999;103B:10684 [24]Rah K,Eu B C.Phys Rev,2003;68E:051204 [1] 葛丽丽; 刘日平; 王强; 王文魁 . Al50Si50合金过冷熔体中Si晶体的生长[J]. 金属学报, 2004, 40(7): 683-688 . Viewed Full text Abstract Cited   Shared      Discussed