金属学报  2007, Vol. 43 Issue (3): 264-268

论文 本期目录 | 过刊浏览 |

低温Au-In-Au金属键合及其在VCSELs制作中的应用

谢正生 吴惠桢 劳燕锋 刘成 曹萌

中国科学院上海微系统与信息技术研究所

Low Temperature Au-In-Au Metallic Bonding and its Application in the Fabrication of VCSELs

XIE Zhengsheng; WU Huizhen;LAO Yanfeng; LIU Cheng; CAO Meng

State Key Laboratory of Functional Materials for Informatics; Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences; Shanghai 200050

谢正生; 吴惠桢; 劳燕锋; 刘成; 曹萌 . 低温Au-In-Au金属键合及其在VCSELs制作中的应用[J]. 金属学报, 2007, 43(3): 264-268 .
, , , , . Low Temperature Au-In-Au Metallic Bonding and its Application in the Fabrication of VCSELs[J]. Acta Metall Sin, 2007, 43(3): 264-268 .

摘要 参考文献 相关文章 Metrics 全文: PDF(766 KB)   摘要: 本文研究了Au-In-Au低温金属键合技术，并把它应用到长波长垂直腔面发射激光器（VCSEL）器件结构的制作中。利用该低温金属键合技术不仅有利于提升器件的热学性能，而且有利于提高VCSEL结构中分布布拉格反射腔镜（DBR）的反射率。实验结果表明，InP基外延半腔VCSEL结构成功地在200 ℃金属键合到Si衬底上，键合强度高，键合质量达到了VCSEL器件工艺制作要求。对键合样品光学特性的分析表明，低温金属键合过程不影响量子阱有源区及DBR的光学性质，这对VCSEL器件结构的制作是有利的。这种低温金属键合技术，有望应用在许多半导体光电器件的制作中。 关键词 ： 低温金属键合,  垂直腔面发射激光器,  反射谱     Abstract：The Au-In-Au low temperature metallic bonding and its application in the structure fabrication of long wavelength vertical cavity surface emitting laser (VCSEL) devices were investigated. The low temperature metallic bonding technic not only improves the thermal characteristic of the bonded devices, but also enhances the reflectivity of the distributed Bragg reflectors (DBR) in the VCSEL structure. The result of Experiments shows that InP based epitaxial VCSEL structure was successfully metallic bonded to the Si substrate at 200 ℃ with high bonding strength, and the bonding quality meets the requirements in the device fabrication of VCSEL. The optical characterization of the bonded samples indicates that the process of low temperature metallic bonding have rarely influence on the optical performance of VCSEL active region and DBR. So this low temperature metallic bonding technic can be used in the structure fabrication of VCSEL devices. And it is expected to be applied in the fabrication of other semiconductor photoelectric devices. Key words： low temperature metallic bonding    vertical cavity surface emitting laser 收稿日期: 2006-08-10      ZTFLH:  TN365   服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 谢正生 吴惠桢 劳燕锋 刘成 曹萌 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y2007/V43/I3/264 [1]Ram R J,Dudley J J,Bowers J E,Yang L,Carey K, Ronner S J,Nauka K.J Appl Phys,1995;78:4227 [2]Sun Y P,Fu Y,Ju B,Wang Y T,Feng Z H,Zhao D G, Zhen X H,Duan L H,Li B C,Zhang S M,Yang H,Jiang Xi M,Zheng W L,Jia Q J.Sci Chin,2002;32 E:584 (孙元平,付羿,渠波,王玉田,冯志宏,赵德刚,郑新和,段俐宏,李秉臣,张书明,杨辉,姜晓明,郑文莉,贾全杰．中国科学,2002;32 E:584) [3]Horng R H,Wuu D S,Wei S C,Tseng C Y,Huang M F, Chang K H,Liu P H,Lin K C.Appl Phys Lett,1999;75: 3054 [4]Wong W S,Sands T,Cheung N W,Kneissl M,Bour D P, Mei P,Romano L T,Johnson N M.Appl Phys Lett,2000; 77:2822 [5]Jewell J L,Harbison J P,Scherer A,Lee Y H,Florez L T. IEEE J Quant Electron,1991;27:1332 [6]Ram R J,Yang L,Nauka K,Houng Y M,Ludowise M, Mars D E,Dudley J J,Wang S Y.Appl Phys Lett,1993; ??62:2474 [7]Qian Y,Zhu Z H,Lo Y H,Hou H Q,Wang M C,Lin W. IEEE Photonics Lett,1997;9:8 [8]Lin H C,Chang K L,Hsieh K C,Cheng K Y.J Appl Phys, 2002;92:4132 [9]Lao Y F,Wu H Z,Huang Z C.Semicond Sci Technol, 2005;20:615 [10]Lao Y F,Wu H Z.Acta Phys Sin,2005;54:4334 (劳燕锋,吴惠桢．物理学报,2005;54:4334) [11]Huang Z C,Wu H Z,Lao Y F,Cao M,Liu C.J Cryst Growth,2005;281:255 [12]Huang Z C,Wu H Z.Chin Phys Lett,2004;21:316 [13]Chen Y C,William W S,Lee C C.IEEE Trans Comput, 1997;20A:46 [14]Liu C C,Lin Y K,Houng M P.IEEE Trans Compon Packag Technol,2003;26:635 [15]Lee C C,Choe S.Mater Sci Eng,2005;333A:45 [16]Chu K M,Lee J S,Han S C,Byung S R,Park H H,Duk Y J.Jpn J Appl Phys,2004;43:5922 [17]Jayaraman V,Mehta M,Jackson A W,Wu S,Okuno Y, Piprek J,Bowers J E.IEEE Photon Technol Lett,2003; 15:1495 [18]Sale T E.IEE Proc-Optoelectron,1995;142:37 [19]Yoshitaka O,Chikara A.J Appl Phys,2000;87:2857 No related articles found! Viewed Full text Abstract Cited   Shared      Discussed