金属学报  2005, Vol. 41 Issue (5): 463-470

论文 本期目录 | 过刊浏览 |

自组装半导体量子点的电子学性质研究进展

孙捷 金鹏 王占国

中国科学院半导体研究所半导体材料科学重点实验室; 北京 100083

孙捷; 金鹏; 王占国 . 自组装半导体量子点的电子学性质研究进展[J]. 金属学报, 2005, 41(5): 463-470 .

摘要 参考文献 相关文章 Metrics 全文: PDF(5325 KB)   摘要: 自组装半导体量子点是人工设计、生长的一种具有量子尺寸效应、量子干涉效应、表面效应、量子隧穿和库仑阻塞效应以及非线性光学效应的新型功能材料。由于其具有晶体缺陷少、材料制备工艺相对简单等优点，而在未来纳米电子器件的研制中有重要的应用价值。本文按照纵向输运、横向输运、电荷存储的顺序，扼要评述了自组装半导体量子点电子学性质的最新研究进展，并对目前存在的问题和发展前景作了分析。 关键词 ： 自组装半导体量子点,  量子尺寸效应     Key words： 收稿日期: 2004-08-18      ZTFLH:  TN304   服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 孙捷 金鹏 王占国 44.8K 链接本文: https://www.ams.org.cn/CN/Y2005/V41/I5/463 [1] Ashoori R. Nature, 1996; 379: 413 [2] McEuen P. Science, 1997; 278: 1729 [3] Sattler K, Muhlbach J, Recknagel E. Phys Rev Lett, 1980; 45: 821 [4] Service R. Science, 2001; 293: 785 [5] Mark R. Proc IEEE, 1999; 87: 652 [6] Service R. Science, 1998; 280: 1193 [7] Yang T. Lecture Notes in Control and Information Sciences, 2001; 272: 307 [8] Williamson A. Int J High Speed Electron Systems, 2002; 12: 15 [9] Vdovin E E, Levin A, Patangravee A, Eaves L, Main P C, Khanin Yu N, Dubrovskii Yu V, Henini M, Hill G. Science, 2000; 290: 122 [10] Averin D, Likharev K. In: Altshuler B, Lee P, Webb R, eds., Mesoscopic Phenomena in Solids. Amsterdam: El sevier, 1991: 173 [11] Qu S C, Zhou W H, Liu F Q, Chen N F, Wang Z G, Pan H Y, Yu D P. Appl Phys Lett, 2002; 80: 3605 [12] Petroff P M, Gossard A C, Logan R A, Wiegmann W. Appl Phys Lett, 1982; 41: 635 [13] Bimberg D, Grundmann M, Ledentsov N. Quantum Dot Heterostructures. Chichester: John Wiley & Sons, 1999: 19 [14] Wang Z G, Chen Y H, Liu F Q, Xu B. J Cryst Growth, 2001; 227-228: 1132 [15] Wang Z G, Wu J. Microelectr J, 2003; 34: 379 [16] Yamaguchi K, Kaizu T, Yujobo K, Saito Y. J Cryst Growth, 2002; 237-239: 1301 [17] Mathews R, Sage J, Sollner T, Calawa S, Chen C, Ma honey L, Maki P, Molvar K. Proc IEEE, 1999; 87: 596 [18] Capasso F, Sen S, Beltram F. In: Sze S M ed., High Speed Semiconductor Devices. New York: Wiley, 1990: 465 [19] Chang L L, Esaki L, Tsu R. Appl Phys Lett, 1974; 24: 593 [20] Bergman J, Chang J, Joo Y, Matinpour B, Laskar J, Jok erst N M, Brooke M A, Brar B, Beam E. IEEE Electron Device Lett, 1999; 20: 119 [21] Luscombe J, Randall J, Bouchard A. Proc IEEE, 1991; 79: 1117 [22] Reddy C, Narayanamurti V, Ryou J, Chowdhury U, Dupuis R. Appl Phys Lett, 2000; 77: 1167 [23] Hapke-Wurst I, Zeitler U, Keyser U, Haug R, Pierz K, Ma Z. Appl Phys Lett, 2003; 82: 1209 [24] Lin S, Lee C. J Appl Phys, 2003; 93: 2952 [25] Hill R, Patane A, Main P, Henini M, Eaves L, Tarucha S, Austing D. J Appl Phys, 2002; 91: 3474 [26] Kamiya I, Tanaka I, Tanaka K, Yamada F, Shinozuka Y, Sakaki H. Phys, 2002; 13E: 131 [27] Wang T, Li H, Zhou J. Appl Phys Lett, 2001; 79: 1537 [28] Li H, Wang T. Appl Phys A, Mater Sci Process, 2001; 73: 615 [29] Bryllert T, Borgstrom M, Wernersson L-E, Seifert W, Samuelson L. Appl Phys Lett, 2003; 82: 2655 [30] Bryllert T, Borgstrom M, Sass T, Gustafson B, Landin L, Wernersson L-E, Serfert W, Samuelson L. Appl Phys Lett, 2002; 80: 2681 [31] Borgstrom M, Bryllert T, Sass T, Gustafson B, Werners son L-E, Seifert W, Samuelson L. Appl Phys Lett, 2001; 78: 3232 [32] Kamiya I, Tanaka I, Ohtsuki O, Sakaki H. Phys, 2002; 13E: 1172 [33] Singer N. Ⅲ-Vs Rev, 1999; 12: 42 [34] Klein D, Roth R, Lim A, Alivisatos A, McEuen P. Nature, 1997; 389: 699 [35] Ralph D, Black C, Tinkham M. Phys Rev Lett, 1997; 78: 4087 [36] Andres R, Bein T, Dorogi M, Feng S, Henderson J, Ku biak C, Mahoney W, Osifchin R, Reifenberger R. Science, 1996; 272: 1323 [37] Choi B H, Hwang S W, Kim I G, Shin H C, Kim Y, Kim E K. Appl Phys Lett, 1998; 73: 3129 [38] Jung S K, Hyon C K, Park J H, Hwang S W, Ahn D, Son M H, Min B D, Kim Y, Kim E K. Appl Phys Lett, 1999; 75: 1167 [39] Fukuda M, Nakagawa K, Miyazaki S, Hirose M. Appl Phys Lett, 1997; 70: 2291 [40] Chen W, Ahmed H. J Vac Sci Technol B, 1995; 13: 2883 [41] Phillips J, Kamath K, Brock T, Bhattacharya P. Appl Phys Lett, 1998; 72: 3509 [42] Schliemann A, Worschech L, Reitzenstein S, Kaiser S, Forchel A. Appl Phys Lett, 2002; 81: 2115 [43] Koike K, Komai H, Li S, Yano M. J Appl Phys, 2002; 91: 819 [44] Shields A J, O'Sullivan M P, Farrer I, Ritchie D A, Cooper K, Foden C L, Pepper M. Appl Phys Lett, 1999; 74: 735 [45] Shields A J , O'Sullivan M P, Farrer I, Ritchie D A, Hogg R A, Leadbeater M L, Norman C E, Pepper M. Appl Phys Lett, 2000; 76: 3673 [46] Kingston R. Optical Sources, Detectors and Systems. London: Academic, 1995 [47] Yano K, Ishii T, Sano T, Mine T, Murai F, Hashimoto T, Kobayashi T, Kure T, Seki K. Proc IEEE, 1999; 87: 633 [48] Chang W, Chen W, Cheng M, Lai C, Hsu T, Yeh N, Chyi J. Phys Rev B, 2001; 64: 125315 [49] Kieβlich G, Wacker A, Scholl E. Phys Rev, 2003; 68B: 125331 [50] Finley J, Skalitz M, Arzberger M, Zrenner A, Bohm G, Abstreiter G. Appl Phys Lett, 1998; 73: 2618 [51] Petroff P, Lorke A, Imamoglu A. Phys Today, 2001; 54: 46 [52] Lundstrom T, Schoenfeld W, Lee H, Petroff P M. Science, 1999; 286: 2312 [53] Schoenfeld W V, Lundstrom T, Petroff P M, Gershoni D. Appl Phys Lett, 1999; 74: 2194 [54] Warburton R J, Durr C S, Karrai K, Kotthaus J P, Medeiros-Ribeiro G, Petroff P M. Phys Rev Lett, 1997; 79: 5282 [55] Zimmermann S, Wixforth A, Kotthaus J, Wegscheider W, Bichler M. Science, 1999; 283: 1292 [56] Castro G, Haarer D, Macfarlane R, Trommsdorf H. US Patent, No.4 101 976, 1978 [57] Moerner W. Persistent Spectral Hole-Burning: Science and Applications. Berlin: Springer-Verlag, 1988 [58] Sugiyama Y, Nakata Y, Muto S, Horiguchi N, Futatsugi T, Awano Y, Yokoyama N. Electron Lett, 1997; 33: 1655 [59] Muto S. Jpn J Appl Phys Part 2, Letter & Express Letter, 1995; 34: L210 [60] Sugiyama Y, Nakata Y, Futatsugi T, Sugawara M, Awano Y, Yokoyama N. Jpn J Appl Phys Part 2, Letter & Express Letter, 1997; 36: L158 [61] Sakaki H, Kato K, Yoshimura H. Appl Phys Lett, 1990; 57: 2800 [62] Wang Z G, Liu F Q, Liang J B, Xu B. Sci in China, Series A, Math Phys Astron, 2000; 43: 861 [63] Ustinov V, Zhukov A, Egorov A, Maleev N. Quantum Dot Lasers. New York: Oxford, 2003 [64] Nayak D, Woo J, Park J, Wang K, MacWilliams K. IEEE Trans Electr Devices, 1996; 43: 180 [65] Tans S, Verschueren A, Dekker C. Nature, 1998; 393: 49 [66] Collier C, Wong E, Belohradsky M, Raymo f, Stoddart J, Kuekes P, Williams R, Heath J. Science, 1999; 285: 391 [67] Chiabrera A, Zitti E, Costa F, Bisio G. J Phys D, Appl Phys, 1989; 22: 1571 [68] Tseng G, Ellenbogen J. Science, 2001; 294: 1293 [69] Service R. Science, 2001; 293: 786 [1] 张国栋; 刘俊成; 李蛟 . 坩埚内壁碳膜对Bridgman法生长CdZnTe晶体热应力的影响[J]. 金属学报, 2007, 43(10): 1071-1076 . [2] 刘俊成 . 坩埚旋转波形参数对晶体组分偏析影响的数值研究[J]. 金属学报, 2004, 40(9): 987-994 . [3] 李志成; 刘路; 吴昕; 贺连龙; 徐永波 . 脆性材料中的微裂纹尖端结构与断裂[J]. 金属学报, 2001, 37(5): 503-506 . [4] 裴志亮; 谭明晖 . 透明导电氧化物ZnO：Al（ZAO）薄膜的研究[J]. 金属学报, 2000, 36(1): 72-76 . [5] 陈猛; 白雪冬; 裴志亮; 孙超; 宫骏; 黄荣芳; 闻立时 . In2O3：Sn（ITO）薄膜的光学特性研究[J]. 金属学报, 1999, 35(9): 934-938 . [6] 陈猛; 白雪冬; 黄荣芳; 闻立时 . 柔性基片上In2O3：Sn和ZnO：Al薄膜的制备及其电学和光学特性[J]. 金属学报, 1999, 35(4): 443-448 . Viewed Full text Abstract Cited   Shared      Discussed