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金属学报  1986, Vol. 22 Issue (5): 128-133    
  论文 本期目录 | 过刊浏览 |
离子剥离逐层分析的计算机模拟
曲哲;谢天生
中国科学院金属研究所;中国科学院金属研究所
THE COMPUTER SIMULATION OF ION SPUTTER PROFILING PROCESS
QU Zhe; XIE Tiansheng (Institute of Metal Research; Academia Sinica. Shenyang)
引用本文:

曲哲;谢天生. 离子剥离逐层分析的计算机模拟[J]. 金属学报, 1986, 22(5): 128-133.
, . THE COMPUTER SIMULATION OF ION SPUTTER PROFILING PROCESS[J]. Acta Metall Sin, 1986, 22(5): 128-133.

全文: PDF(411 KB)  
摘要: <正> Auger电子能谱分析与惰性气体离子刻蚀技术相配合测量元素的浓度-深度分布曲线,已广泛用于表面研究中。本工作提出了一个描述离子剥离过程中表层浓度与体内浓度和元素剥离系数之间的关系的数学模型。采用一般文章中常用的假定:(1)当离子能量不高时,被溅射原子只来自表面第一层,(2)每种元素的剥离系数在一定的浓度范围内变化不大,近似地看作是常数,(3)在所研究区域内离子的通量
Abstract:Based on the common used assumptions and differential sputtering model, the equations describing sputtering process have been derived. Both concentration and depth can be calculated simultaneously. It is suitable not only for the homogeneous binary systems but also for the multicomponent systems which are not necessary to be a homogeneous one. Some possible original concentration distribution systems have been treated with those equations and showed they are workable.
收稿日期: 1986-05-18     
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