金属学报  1984, Vol. 20 Issue (4): 358-361

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氧离子注入使晶态Al转变为非晶态Al_2O_3的研究

孙树滋

东北工学院

TRANSITION FROM CRYSTALLINE Al TO AMORPHOUS Al_2O_3 BY O~+-IMPLANTATION

SUN Shuzi (Northeast Institute of Technology; Shenyang) (Manuscript received 28 March; 1983; revised manuscript 8 October; 1983)

孙树滋. 氧离子注入使晶态Al转变为非晶态Al_2O_3的研究[J]. 金属学报, 1984, 20(4): 358-361.
. TRANSITION FROM CRYSTALLINE Al TO AMORPHOUS Al_2O_3 BY O~+-IMPLANTATION[J]. Acta Metall Sin, 1984, 20(4): 358-361.

摘要 参考文献 相关文章 Metrics 全文: PDF(1098 KB)   摘要: TEM的实验观察表明:O~+注入前,Al薄膜是面心立方结构的多晶体,其晶粒大小为200—600(■)。注入后,Al薄膜晶粒随着O~+注入剂量的增加而明显细化,当O~+注入剂量达到1×10~(17)ion/cm~2时,Al薄膜晶粒细化成19—40(■),此时晶态特征的电子衍射环退化成漫散的晕轮,这说明Al薄膜长程有序消失,转变成短程有序状态,即从晶态过渡到非晶态。ESCA得出这种非晶物质是Al_2O_3。 Abstract：TEM was employed to study the transition from crystalline Al to amorphous state Al_2O_3 by O~+-implantation. The structural feature of the thin film specimen appears to be fcc polycrystals between 200 to 600(■) and to refine obviously during O~+ implanting. The refinement may be down to 19-40(■) when the increasing of the dose of O~+-implanted up to 1×10~(17) ion/cm~2. The diffraction pattern becomes the faint diffuse scattering ring, i.e., an enough evidence of the order-disorder transition or the amorphous formation is given. ESCA has identified that the amorphous substance is Al_2O_3. 收稿日期: 1984-04-18      服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 孙树滋 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y1984/V20/I4/358 1 Borders, J. A.; Cullis, A.G; Poate, J.M., Applications of Ion Beams to Materials, Ed. Carter, G., Phys. Conf. Ser. 28, 1976, Chapt. 5, p.204． 2 Myers, S.M., J. Vac. Sci. Technol., 17 (1980) , 310． 3 Poate, J.M., J. Vac. Sci. Technol., 15 (1978) , 1636． 4 Carter, G.; Grant, W.A., Ion Implantation of Semiconductors, Edward Arnold, London, 1976． 5 Grant, W.A., J. Vac. Sci. Technol., 15(1978) , 1644． No related articles found! Viewed Full text Abstract Cited   Shared      Discussed