金属学报  1982, Vol. 18 Issue (5): 581-653

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Al-Si共晶合金变质机理的探讨——添加元素对Al-Ge和Al-Si-Ge共晶合金显微结构的影响

张启运;刘淑祺;樊晓红

北京大学化学系;北京大学化学系;北京大学化学系

THE MODIFICATION OF Si PHASE IN Al-Si EUTECTIC ALLOYS——Effect of Element Addition on Microstructures of Al-Si and Al-Si-Ge Eutectic Alloys

Zhang Qiyun; Liu Shuqi; Fan Xiaohong (Department of Chemistry; Beijing University)

张启运;刘淑祺;樊晓红. Al-Si共晶合金变质机理的探讨——添加元素对Al-Ge和Al-Si-Ge共晶合金显微结构的影响[J]. 金属学报, 1982, 18(5): 581-653.
, , . THE MODIFICATION OF Si PHASE IN Al-Si EUTECTIC ALLOYS——Effect of Element Addition on Microstructures of Al-Si and Al-Si-Ge Eutectic Alloys[J]. Acta Metall Sin, 1982, 18(5): 581-653.

摘要 参考文献 相关文章 Metrics 全文: PDF(2226 KB)   摘要: 用金相方法考察了微量添加元素对Al-Ge和Al-Si-Ge共晶合金显微结构的影响。ⅡB,ⅢA,ⅣA和ⅤA族元素对Al-Ge共晶结构并无影响;ⅣB,ⅤB和ⅥB族难熔金属影响较大,共晶Ge聚集为大块的结晶;碱金属,碱土金属和一些VⅢ族金属的加入,使Al-Ge共晶点向富Al方向移动。Al-Ge共晶不出现类似Al-Si共晶的那种变质现象.Al-Si-Ge系变质时,Si以变质的共晶团存在。根据Al-Ge和Al-Si结晶过程的对比,认为Al-Si共晶的变质,主要取决于变质剂原子对(100)_(Al)∥(110)_(Si)外延关系的影响。 Abstract：The effect of micro-amount element additions on the microstructures of Al-Ge and Al-Si-Ge eutectic alloys has been studied by means of metallographic method. For Al-Ge eutectics, no evidence was found of occurring any modification something like that exists in the Al-Si system. Some elements which belong to the ⅣB, ⅤB and ⅥB groups in the periodic table of elements seriously influence their microstructures and change the feather-like Al-Ge euteetic into block Ge crystals. In the other case, it appears to move the eutectic point to the Al-rich side when some alkaline, alkaline earth and rare earth elements were added in this eutectic. The modifiers Na, Sr, La effective in the Al-Si system were scanned about their effects on the Al-Si-Ge system. In this ease, eutectic Si exists in modified clusters form and gradually dwindle their size with increasing the Ge content, finally they disappeared at the Al-Ge side. According to comparison of the modification between the Al-Ge and Al-Si systems, it was considered that the modification of Al-Si eutectic was mainly decided by the effects of modifier atoms on the epitaxial orientation relationship or decreasing the disregistry between {110}_(Si) and {100}_(Al). 收稿日期: 1982-05-18      服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 张启运 刘淑祺 樊晓红 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y1982/V18/I5/581 1 Day, M. G.; Hellawell, A., J. Inst. Met., 95(1967) , 377． 2 Hansen, M.; Anderko, K., Constitution of Binary Alloys, McGraw-Hill, New York, 1958, p. 23． 3 #12 4#12 5 Pech, G. J.; Thesis, M. S., LBL 7300,(1977) , p. 6． 6 刘淑祺;孙国平;张启运,金属学报,18(1982) ,451． 7 Hellawell, A., Trans Metall. Soc. AIME, 239(1967) , 1049． 8 Day, M. G., J. Inst. Met., 98(1970) , 57． 9 朱培钺;陈熙琛;贾均;张宝书;刘贤功,未发表资料,1979． 10 Hellawell, A., Progress in Materials Science, Vol. 15, Part Ⅰ, Pergamon, London 1970, p. 47． 11 张启运;郑朝贵;韩万书,金属学报,17(1981) ,130 No related articles found! Viewed Full text Abstract Cited   Shared      Discussed