Received date: 2009-09-08
Revised date: 2009-11-26
Online published: 2010-03-11
Supported by
Supported by National Natural Science Foundation of China (No.50671017)
It has been verified that He embrittlement in metals could be suppressed by proper additions of alloying elements, and this effect is related to highly dispersive secondary phase precipitated in the matrix. Effect of C doping on ion implantated He behavior in Al has been investigated by XPS, XRD, TEM and SEM. It was found that the secondary phase precipitated in the surface of Al doped with C is Al4C3. With the increase of the dose of C, the volume of Al unit cell increased, and the preferred orientation of Al surface changed from (100 to (111), which will affect the He behavior in Al. The pre-doped C played an important role in the Al surface blistering induced by He ion implantation, and the extent is dependent on the dose of pre-doped C. When the Al sample was pre-doped by C with smaller fluence (≦5.0×1020 ions/m2), the growth of blisterings is suppressed effectively, and the surface blisterings are distributed more uniformly. However, when pre-doped C has larger fluence (≧1.0×1021 ions/m2), the suppression effect of C on surface blistering would be reduced, and even the irradiation damage of He ions (voids and flakings) would appear in the surface. The effect of C doping on the microstructure in Al was also observed.
Key words： Al; C doping; He behavior; blistering; microstructure
XIANG Xin , CHEN Zhang-An , LIU Ke-Zhao , LUO Li-Zhu , LIU Ting-Ting , YU Xiao-Yang . EFFECT OF C DOPING ON He BEHAVIOR IN Al[J]. Acta Metall Sin, 2010 , 46(3) : 318 -323 . DOI: 10.3724/SP.J.1037.2009.00590
[1] Robinson S L. Mater Sci Eng, 1987; 96: 7
[2] Robinson S L, Thomas G J. Metall Mater Trans, 1991; 22A: 879
[3] Matta M K, Kesternich W. Bull Mater Sci, 1990; 13: 313
[4] Rajaraman R, Amarendra G, Viswanathan B, Sundar C S, Gopinathan K P. J Nucl Mater, 1996; 231: 55
[5] Yamamoto N, Nagakawa J, Shiraishi H. J Nucl Mater, 1995; 226: 185
[6] Zhang C H, Jang J S, Yang Y T, Song Y, Sun Y M, Cho H D, Jin Y F. Chin Sci Bull, 2008; 53: 3416
[7] Wright R N, Van siclen C D, Usmar S G, Mochel M E. J Nucl Mater, 1991; 182: 281
[8] Kamigaki N, Furuno S, Hojou K, Ono K, Hashioto E, Izui K, Kino T. J Nucl Mater, 1992; 191–194: 1214
[9] Xiang X, Chen C A, Liu K Z, Peng L X, Rao Y C. Rare Met, 2009; 33: 510
(向鑫, 陈长安, 刘柯钊, 彭丽霞, 饶咏初. 稀有金属, 2009; 33: 510)
[10] Weast R C. Handbook of Chemistry and Physics. 64th Ed., New York: CRC Press, 1985: 54
[11] Streletskii A N, Povstugar I V, Borunova A B, Lomaeva S F, Butyagin P Yu. Colloid J, 2006; 68: 470
[12] Zhang W F, Li J R. Surf Technol, 2009; 38: 33
(张文峰, 李建蓉. 表面技术, 2009; 38: 33)
[13] Huang M D, Sun C, Lin G Q, Dong C, Wen L S. Acta Metall Sin, 2003; 39: 516
(黄美东, 孙超, 林国强, 董闯, 闻立时. 金属学报, 2003; 39: 516)
[14] Wilson K L, Thomas G J. J Nucl Mater, 1976; 63: 266
[15] Fukahiro T, Kanda Y, Mori K, Tobimatsu H. J Nucl Mater, 1985; 133–134: 277
[16] Li Y L, Meng J L, Wei X Z. South Chin Univ Technol
(李友麟, 蒙继龙, 魏兴钊. 华南理工大学学报(自然学科版), 1989; 17: 60)
[17] Kalashnikov A N, Chernov I I, Kalin B A, Binyukova S Y. J Nucl Mater, 2002; 307–311: 362
[18] Kesternich W. Radiat Eff, 1983; 78: 261
[19] De waard H, Pleiter F, Boerma D O, Niesen L, Zhang G L. Nucl Iustr Meth Phys Res, 1983; 209–2l0: 899
/
| 〈 |
|
〉 |
