Abstract The recrystallization of the hot-rolled silicon iron single crystals, after a reduction inthickness of 35％, was investigated. It was observed that the distortion was not uniformacross the thickness after hot-rolling. The distorion in the surface layer was larger thanin the inferior. When the samples were annealed, the recrystallization took place first inthe surface layer by the process of recrystallization in situ. Then the grains grew towardsthe interior by preferred growth of recrystallized grains in the surface layer.
