|
|
|
| AN INVESTIGATION ON THE VAPOUR PHASE EPITAXY OF DOPED GaAs |
| Peng Ruiwu;Sun Shangzhu;Shen Songhua Shanghai Institute of Metallurgy; Academia Sinica |
|
Cite this article:
Peng Ruiwu;Sun Shangzhu;Shen Songhua Shanghai Institute of Metallurgy; Academia Sinica. AN INVESTIGATION ON THE VAPOUR PHASE EPITAXY OF DOPED GaAs. Acta Metall Sin, 1980, 16(3): 308-373.
|
|
|
Abstract Epitaxial layers of doped GaAs have been prepared from a Ga/AsCl_3/H_2 systemin an improved epitaxial apparatus and the vapour-phase doping process of the GaAshas been investigated. The quality of these layers thus obtained was found to besatisfactory and they are used in making microwave devices such as variators andswitches. Discussions on a variety of factors including surface morphology, growthrate, electronic mobility, breakdown voltage, doping uniformity across a wafer,doping profile, defects and reproducibility of the epitaxy were made.
|
|
Received: 18 March 1980
|
[1] Luther, L. C. and Dilorenzo, J. V., J. Electrochem. Soc., 122(1975) , 760．
[2] Bachem, K. H. and Bruch, H., J. Electrochem. Soc., 122 (1975) , 1000．
[3] Dilorenzo, J. V., J. cryst. Growth, 17 (1972) , 189．
[4] Nakanisi, T. and Kasiwagi, M., Jap. J. Appl. Phys., 13 (1974) , 484．
[5] Dyment, J. C. and Rozgonyi, G. A., J. Electrochem. Soc., 118 (1971) , 1346．
[6] #12
[7] Nakagawa, M. and Ikoma, H., Jap. J. Appl. Phys., 10 (1971) , 1345．
[8] Sze, S. M., Physics of Semiconductor Devices, John Wiley and Sons Inc., 1969．
[9] Rode, D. L. and Knight, S., Phys. Rev., 3B (1971) , 2534．
[10] Wolfe, C. M., Stillman, G. E. and Lindley, W. T., J. Appl. Phys., 41 (1970) , 3088．
[11] Hilsum, C., Rose-Inne, A.C., Semiconducting Ⅲ-Ⅴ Compounds, International Series of Monographs on Semiconducfors, 1961． Pergamon, New York, p.140．
[12] Poth, H., Bruch, H., Heyen, M. and Balk, P., J. Appl. Phys., 49 (1978) , 285．
[13] Wolfe, C. M., Stillman, G. E. and Dimmock, J. C., J. Appl. Phys., 41 (1970) , 504．
[14] Wolf, C. M. and Stillman, G. E., Solid State Commun., 12 (1973) , 283．
[15] #12
[16] Kressel, H., RCA Review, 28 (1967) , 175．
[17] Wolfe, C. M., 1968 Proceedings of 2nd International Symposium on GaAs and Related Composition, London and Aristol, Inst. Phys., 1970．
[18] Fairman, R. O. and Soloman, K., J. Electrochem. Soc., 120 (1973) , 541．
[19] Grove, A. S., Roder, A. and San, C. T., J. Appl. Phys., 36 (1965) , 802．
[20] Seto, H. and Iida, S., Jap. J. Appl. Phys., 9 (1970) , 156．
[21] Richard, D. F., J. Electrochem. Soc., 122 (1975) , 800．
[22] Faktor, M. M. and Stevenson, J. L., J. Electrochem. Soc., 125 (1978) , 621．
[23] Green, L. I., J. Appl. Phys., 48 (1977) , 3739．
[24] Bachem, K. H., Erlaki, G. and Markert, W., Proceedings of the 4th International Conference on Chemical Vapour Deposition 1973, p. 296．
[25] #12
[26] Don Shaw, W., in "Extended Abstracts", vol. 77--2, N 327, p. 862, The Electrochemical Society Fall Meeting, Atlanta, Georgia, 1977．p |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
| |
Shared |
|
|
|
|
| |
Discussed |
|
|
|
|
