ACTIVATION ENERGY OF ELECTROMIGRATION IN THIN METAL FILMS
Wu Yunzhong and Sun Chenglong (Shanghai Institute of Metallurgy; Academia Sinica)
Cite this article:
Wu Yunzhong and Sun Chenglong (Shanghai Institute of Metallurgy; Academia Sinica). ACTIVATION ENERGY OF ELECTROMIGRATION IN THIN METAL FILMS. Acta Metall Sin, 1981, 17(6): 635-642.
Abstract The accumulation of non-equilibrium defects in the thin metal films during electromigration may cause to increase their resistance. The change of the resistivity has been derived as either of the following equations:d(ΔR/R_0)/dt=cmj~2ρ~(3/2)Z_i~*eD_0/λ~(1/2)kT exp(-Q/kT) and d(ΔR/R_0)/dt=c_1mj~2ρ~(3/2)Z_i~*eD_0(2(T-T_e)+α(T-T_e)~2)~(1/2)/λ~(1/2)kT exp(-Q/kT) by which the activation energy of elecromigration, Q, in the thin metal films is quite easily determined. For example, in the Al-3.2% Cu alloy stripe, Q=0.65±0.04 eV, calculated by the former equation; and in pure Al film, Q is agreed to the Hummel's result, after treated his data and calculated by the later one.
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