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Acta Metall Sin  1986, Vol. 22 Issue (6): 133-155    DOI:
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EFFECT OF SURFACE OXIDATION ON THERMAL STABILITY OF AMORPHOUS Pd_(80)Si_(20)
by LI Zongquan; QI Zhenzhong; HE Yizhen (Institute of Solid Physics; Academia Sinica; Hefei)
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by LI Zongquan; QI Zhenzhong; HE Yizhen (Institute of Solid Physics; Academia Sinica; Hefei). EFFECT OF SURFACE OXIDATION ON THERMAL STABILITY OF AMORPHOUS Pd_(80)Si_(20). Acta Metall Sin, 1986, 22(6): 133-155.

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Abstract  Surface oxidation of amorphous Pd_(80)Si_(20) was studied by in situ observation in JEOL-200CX electron microscope under vacuum about 10~(-5) Pa and AES. An amorphous oxide layer formed evidently on the surface of the α-Pd_(80)Si_(20) specimen at a temperature around 120℃. During heating, owing to the inward movement of Si-atoms and surface oxidation, the Si content along the edge of a wedge specimen and on the surface layers of the matrix increased, and therefore made the thermal stability decreased.
Received:  18 June 1986     
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https://www.ams.org.cn/EN/     OR     https://www.ams.org.cn/EN/Y1986/V22/I6/133

1 李宗全;何怡贞,科学通报,30 (1985) ,1859。
2 Funakoshi, N.; Kanamori. T.; Manabe. T., Jpn J. Appl. Phys., 17 (1978) , 11.n
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