EFFECT OF SURFACE OXIDATION ON THERMAL STABILITY OF AMORPHOUS Pd_(80)Si_(20)
by LI Zongquan; QI Zhenzhong; HE Yizhen (Institute of Solid Physics; Academia Sinica; Hefei)
Cite this article:
by LI Zongquan; QI Zhenzhong; HE Yizhen (Institute of Solid Physics; Academia Sinica; Hefei). EFFECT OF SURFACE OXIDATION ON THERMAL STABILITY OF AMORPHOUS Pd_(80)Si_(20). Acta Metall Sin, 1986, 22(6): 133-155.
Abstract Surface oxidation of amorphous Pd_(80)Si_(20) was studied by in situ observation in JEOL-200CX electron microscope under vacuum about 10~(-5) Pa and AES. An amorphous oxide layer formed evidently on the surface of the α-Pd_(80)Si_(20) specimen at a temperature around 120℃. During heating, owing to the inward movement of Si-atoms and surface oxidation, the Si content along the edge of a wedge specimen and on the surface layers of the matrix increased, and therefore made the thermal stability decreased.