|
|
|
| EFFECT OF SURFACE OXIDATION ON THERMAL STABILITY OF AMORPHOUS Pd_(80)Si_(20) |
| by LI Zongquan; QI Zhenzhong; HE Yizhen (Institute of Solid Physics; Academia Sinica; Hefei) |
|
Cite this article:
by LI Zongquan; QI Zhenzhong; HE Yizhen (Institute of Solid Physics; Academia Sinica; Hefei). EFFECT OF SURFACE OXIDATION ON THERMAL STABILITY OF AMORPHOUS Pd_(80)Si_(20). Acta Metall Sin, 1986, 22(6): 133-155.
|
|
|
Abstract Surface oxidation of amorphous Pd_(80)Si_(20) was studied by in situ observation in JEOL-200CX electron microscope under vacuum about 10~(-5) Pa and AES. An amorphous oxide layer formed evidently on the surface of the α-Pd_(80)Si_(20) specimen at a temperature around 120℃. During heating, owing to the inward movement of Si-atoms and surface oxidation, the Si content along the edge of a wedge specimen and on the surface layers of the matrix increased, and therefore made the thermal stability decreased.
|
|
Received: 18 June 1986
|
1 李宗全;何怡贞,科学通报,30 (1985) ,1859。
2 Funakoshi, N.; Kanamori. T.; Manabe. T., Jpn J. Appl. Phys., 17 (1978) , 11．n |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
| |
Shared |
|
|
|
|
| |
Discussed |
|
|
|
|
