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MEASUREMENT OF VACANCY MIGRATION ENERGY BY ELECTRON IRRADIATION |
WAN Farong;XIAO Jimei;YUAN Yi University of Science and Technology Beijing lecturer;Department of Material Physics;University of Science and Technology Beijing; Beijing 100083 |
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Cite this article:
WAN Farong;XIAO Jimei;YUAN Yi University of Science and Technology Beijing lecturer;Department of Material Physics;University of Science and Technology Beijing; Beijing 100083. MEASUREMENT OF VACANCY MIGRATION ENERGY BY ELECTRON IRRADIATION. Acta Metall Sin, 1990, 26(2): 74-78.
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Abstract A method together with a new formula were developed for measur-ing the vacancy migration energy by HVEM considering the effect of surface sinkof specimen on point defects. The vacancy migration energy may be calculatedthrough the loop growth rate under electron irradiation at various temperatures.
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Received: 18 February 1990
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1 Kiritani M, Takata H, Moriyama K, Fujita F E. Philos Mag, 1979; 40A: 779--802 2 Kiritani M. In: Takamura J, Doyama M, Kiritani M eds., Point Defects and Defect Interactions in Metals, Tokyo: Tokyo University, 1982: 59--66 3 Phillipp F, Saile B, Urban K. In: Takamura J, Doyama M, Kiritani M eds., Point Defects and Defect Interactions in Metals, Tokyo: Tokyo, University 1982: 261--264 4 Takahashi H, Urban K. In: Takamura J, Doyama M, Kiritani M eds., Point Defects and Defect Interactions in Metals, Tokyo: Tokyo University, 1982: 346--348 |
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