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| IMPROVEMENT OF OXIDATION RESISTANCE OF TiAl BY ION-BEAM-ENHANCED DEPOSITION OF Si_3N_4 COATINGS |
| XU Dong;ZHU Hong; TANG Lijuan;YANG Yunjie; ZHENG Zhihong; LIU Xianghuai(Ion Beam Laboraiory; Shanghai Institute of Metallurgy; Chinese Academy of Sciences; Shanghai 200050) TA NIGUCHI S; SHIBATA T(Department of Materi als Science and Processing; Faculty of Engineering; Osaka University; Japan)(Manuscript received 1994-02-19; in revised form 1994-11-30) |
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Cite this article:
XU Dong;ZHU Hong; TANG Lijuan;YANG Yunjie; ZHENG Zhihong; LIU Xianghuai(Ion Beam Laboraiory; Shanghai Institute of Metallurgy; Chinese Academy of Sciences; Shanghai 200050) TA NIGUCHI S; SHIBATA T(Department of Materi als Science and Processing; Faculty of Engineering; Osaka University; Japan)(Manuscript received 1994-02-19; in revised form 1994-11-30). IMPROVEMENT OF OXIDATION RESISTANCE OF TiAl BY ION-BEAM-ENHANCED DEPOSITION OF Si_3N_4 COATINGS. Acta Metall Sin, 1995, 31(16): 164-172.
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Abstract Silicon nitride films were synthesized by ion-beam-enhanced-deposition (IBED) on an IBED system. Auger electron spectroscopy, X-ray diffraction (XRD). X-ray photoemission spectroscopy (XPS) and the scratch test were performed for investigating the composition. structure and the adhesion with the substrate of them. It was found that the silicon nitride film is composed of a thin silicon enriched top layer. a stoichiometric Si3N4 layer and a mixing layer at the film-substrate interface. Cyclic oxidation tests were carried out on the TiAl coated with the silicon nitride films of thicknesses of 0.5. 1 and 2 μm. The results revealed that IBED silicon nitride film is effective to improve the oxidation resistance of TiAl at high temperature. The 0.5 μm silicon nitride film demonstrated an excellent oxidation resistance at 1300 K for at least 30 cycle (600 h). However, this effect decreases as the thickness of coating increases. SEM and energy-dispersive X-ray spectroscopy revealed that the excellent oxidation resistance came from the formation of a thin layer rich in Al2O3 and silicon compound beneath the outer TiO2thin layer. (Correspondent: LIU Hianghuai, Professor, Shanghai Institute of Metallurgy, Chinese Academy of Sciences,Shanghai,200050)
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