利用倾斜溅射的方法制备了非晶CoFeB磁性薄膜,研究了倾斜溅射对非晶CoFeB磁性薄膜条纹磁畴结构、面内静态磁各向异性、面内转动磁各向异性、垂直磁各向异性的影响规律。结果表明,倾斜溅射可以有效地降低CoFeB非晶薄膜条纹磁畴结构出现的临界厚度,无倾斜溅射时,CoFeB薄膜出现条纹磁畴结构的临界厚度大于240 nm,倾斜溅射时,出现条纹磁畴结构的临界厚度小于240 nm。磁性测试结果表明,对于具有条纹磁畴结构的CoFeB薄膜,倾斜溅射不仅可以提高磁性薄膜的面内静态磁各向异性的强度,同时还可以增强面内转动磁各向异性与垂直磁各向异性的强度。随着倾斜溅射角度的逐渐增大,磁各向异性的强度均呈现增大的趋势。XRD和TEM观测结果证明,CoFeB薄膜趋于非晶结构,同时,SEM观察结果表明,CoFeB薄膜虽然不存在长程有序的晶体结构,但依然可以形成柱状结构,由于倾斜溅射技术,形成的柱状结构呈倾斜状态,从而增强了薄膜的垂直磁各向异性,导致条纹磁畴结构的出现。

Magnetic anisotropy is one of the most important fundamental properties of magnetic thin film. The strength of magnetic anisotropy determines the ferromagnetic resonance frequency of magnetic films in the high-frequency applications. Because of the directionality of conventional static magnetic anisotropy in magnetic film, the high-frequency device usually shows an obvious directionality. When the microwave magnetic ?eld deviates from the perpendicular direction of magnetic anisotropy, the devices cannot reveal their best performance. The magnetic ?lm with a stripe magnetic domain structure displays an in-plane rotatable magnetic anisotropy, which can be an important strategy to solve the problem of magnetic ?eld orientation dependent performance in high-frequency device. Therefore, the magnetic domain, the magnetic anisotropy, and the high-frequency behaviors for magnetic ?lms with a stripe magnetic domain structure have received extensive attention. Previously, most of the studies focused on the stripe magnetic domain structure of polycrystalline thin films. However, less attention was paid on amorphous magnetic thin films. Since the amorphous magnetic films have no long-range ordered crystal structure, no magnetocrystalline anisotropy, no grain boundary defects resistance hindering the domain wall displacement, they usually show excellent soft magnetic properties and have been widely applied in high-frequency devices. CoFeB alloy is one of the most important amorphous magnetic materials and has been extensively applied in various spintronic devices. In this work, amorphous CoFeB magnetic thin films were prepared by using a method of oblique sputtering technique at room temperature. The influences of oblique sputtering on the stripe magnetic domain structure, the in-plane static magnetic anisotropy, the in-plane rotational magnetic anisotropy, and the perpendicular magnetic anisotropy of the amorphous CoFeB films were studied by scanning probe microscope, vibrating sample magnetometer, ferromagnetic resonance. It is found that the method of oblique sputtering could effectively reduce the critical thickness for the appearance of stripe magnetic domain in amorphous CoFeB films. For a non-oblique sputtered CoFeB film, the critical thickness for the appearance of the stripe magnetic domain is above 240 nm. In contrast, after been subjected to the oblique sputtering, the critical thickness becomes below 240 nm. The different magnetic characterizations indicate that for the growth of CoFeB films with stripe magnetic domain structure, the oblique sputtering could not only enhance the strength of in-plane static magnetic anisotropy, but also improve the in-plane rotational magnetic anisotropy and the perpendicular magnetic anisotropy. All of the magnetic anisotropies are increased with the angle of oblique sputtering. The observation results of XRD and TEM prove that the prepared CoFeB thin films tend to amorphous structure. The characterization of SEM observation indicates that although the amorphous CoFeB films do not possess long-range ordered crystalline structure, they still could form a kind of columnar structure. The slanted columnar structure of CoFeB films could significantly increase the perpendicular magnetic anisotropy, thus lead to the appearance of stripe magnetic domain structure.