Zr/Cu/Zr部分瞬间液相焊扩散连接Ti(C, N)-Al2O3陶瓷基复合材料*

  • 吴铭方 ,
  • 匡泓锦 ,
  • 王凤江 ,
  • 林红香 ,
  • 胥国祥
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  • 江苏科技大学先进焊接技术省级重点实验室, 镇江 212003
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吴铭方, 男, 1962年生, 教授, 博士

收稿日期: 2013-11-28

  修回日期: 2014-02-25

  网络出版日期: 2014-05-20

基金资助

* 国家自然科学基金项目51175239, 江苏省科技计划项目BK2011494和江苏省高校自然科学研究项目11KJA430005资助

PARTIALLY TRANSIENT LIQUID PHASE-DIFFUSION BONDING ON Ti(C, N)-Al2O3 CERAMIC MATRIX COMPOSITES USING Zr/Cu/Zr AS INTERLAYER

  • Mingfang WU ,
  • Hongjin KUANG ,
  • Fengjiang WANG ,
  • Hongxiang LIN ,
  • Guoxiang XU
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  • Key Laboratory of Advanced Welding Technology of Jiangsu Province, Jiangsu University of Science and Technology, Zhenjiang 212003

Received date: 2013-11-28

  Revised date: 2014-02-25

  Online published: 2014-05-20

Supported by

Supported by National Natural Science Foundation of China (No.51175239), Jiangsu Provincial Research Foundation for Basic Research (No.BK2011494) and College Natural Science Foundation of Jiangsu Province (No.11KJA430005)

摘要

采用Zr箔/Cu箔/Zr箔中间层对Ti(C, N)-Al2O3陶瓷基复合材料进行部分瞬间液相扩散连接实验, 研究保温时间对元素扩散及界面反应产物的影响, 探讨了制约接头室温强度的因素, 对比分析了在部分瞬间液相扩散连接过程中, 辅助脉冲电流对元素扩散及接头强度的作用机制. 结果表明, 预置Zr箔/Cu箔/Zr箔中间层通过部分瞬间液相扩散连接, 在加热温度950 ℃, 保温时间15~30 min条件下接头强度达到最大值. 保温时间过短, 活性元素Zr削弱基体强度, 保温时间过长, Zr与Cu在界面生成金属间化合物降低了接头的强度. 扩散焊过程中施加辅助脉冲电流能够有效缓解接头的残余应力, 防止裂纹在脆性基体材料中扩展; 但是同时促进了界面处的反应进程, 显著提高了界面处Cu-Zr金属间化合物的形成速度, 使得界面易成为接头的薄弱环节.

本文引用格式

吴铭方 , 匡泓锦 , 王凤江 , 林红香 , 胥国祥 . Zr/Cu/Zr部分瞬间液相焊扩散连接Ti(C, N)-Al2O3陶瓷基复合材料*[J]. 金属学报, 2014 , 50(5) : 619 -625 . DOI: 10.3724/SP.J.1037.2013.00777

Abstract

The partially transient liquid phase-diffusion bonding (PTLP-DB) on Ti(C, N)-Al2O3 ceramic matrix composites (CMC) was studied using the Zr foil/Cu foil/Zr foil sanwich as an interlayer. Effect of holding time during PTLP-DB on the element diffusion and reacted products at the interface was analyzed and the affected factors on the joint strength during PTLP-DB were explored. The effect of auxiliary pulse current during PTLP-DB between CMC on element diffusion at the interface and joint strength and its mechanism were also studied. The results showed that the optimum holding times were 15~30 min during PTLP-DB on CMC at 950 ℃. With a shorter holding time, the joint strength decreased due to the existance of unreacted Zr elements at the interface, while with a longer holding time, the joint strength decreased due to the overgrowth of CuZr intermetallics at the interface. With the auxiliary pulse current during PTLP-DB, the residual stress at the interface was greatly decreased, which inhibited the propagation of crack into the base materials. While, the auxiliary pulse current can promote the reaction between Cu and Zr and the formation of Zr-Cu intermetallics at the interface, which produced a weaked interface in the joints.

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