论文

AlCrTaTiNi/(AlCrTaTiNi)N双层扩散阻挡层的制备及热稳定性

  • 张立东 ,
  • 王飞 ,
  • 陈顺礼 ,
  • 汪渊
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  • 四川大学原子核科学技术研究所教育部辐射物理及技术重点实验室, 成都 610064
张立东, 男, 1985年生, 硕士生

收稿日期: 2013-04-23

  修回日期: 2013-08-04

  网络出版日期: 2013-12-11

基金资助

国家自然科学基金项目51171124和50771069, 教育部新世纪人才基金NCET--08--0380, 四川省科技支撑计划基金项目07FG001-017资助

FABRICATION AND THERMAL STABILITY OF AlCrTaTiNi/(AlCrTaTiNi)N BILAYER DIFFUSION BARRIER

  • ZHANG Lidong ,
  • WANG Fei ,
  • CHEN Shunli ,
  • WANG Yuan
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  • Key Laboratory for Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064

Received date: 2013-04-23

  Revised date: 2013-08-04

  Online published: 2013-12-11

摘要

通过多靶共溅射的方法, 制备了(AlCrTaTiNi)N和双层AlCrTaTiNi/(AlCrTaTiNi)N 扩散阻挡层, 并利用XRD,EDS和SEM研究了其组织结构、相组成及在高温下的热稳定性能. 结果表明,Cu/(AlCrTaTiNi)N/Si经500℃退火后界面处已有脱开倾向, 700℃后Cu膜则完全脱落.AlCrTaTiNi可增强Cu和(AlCrTaTiNi)N的粘附性.AlCrTaTiNi/(AlCrTaTiNi)N 经800℃退火后仍能起到有效的扩散阻挡性能,900℃下出现了深能级的Cu--Si相, 方块电阻急剧升高, 表明该阻挡层失效.

本文引用格式

张立东 , 王飞 , 陈顺礼 , 汪渊 . AlCrTaTiNi/(AlCrTaTiNi)N双层扩散阻挡层的制备及热稳定性[J]. 金属学报, 2013 , 49(12) : 1611 -1616 . DOI: 10.3724/SP.J.1037.2013.00207

Abstract

The (AlCrTaTiNi)N and AlCrTaTiNi/(AlCrTaTiNi)N thin films were deposited on Si substrates as copper interconnects diffusion barriers by magnetron sputtering methods. The phase structure, phase composition and thermal stability at high temperature were investigated by XRD, EDS and SEM in this work, respectively. The results indicate that the gap could be observed between Cu and (AlCrTaTiNi)N layers when the samples were annealed at 500℃ for 30 min, and the Cu film fall off at 700℃ under visual conditions. The bonding properties of Cu and (AlCrTaTiNi)N layers can be improved by inserting a AlCrTaTiNi layer. The XRD patterns, SEM cross-sectional micrographs and sheet resistance data show that the AlCrTaTiNi/(AlCrTaTiNi)N bilayers is stable up to 800℃.

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