原位合成MoSi2－SiC复合材料在500℃的氧化行为

张来启; 潘昆明; 段立辉; 林均品

doi:10.3724/SP.J.1037.2013.00527

金属学报 >

2013 , Vol. 49 >Issue 11: 1303 - 1310

DOI: https://doi.org/10.3724/SP.J.1037.2013.00527

论文

原位合成MoSi₂－SiC复合材料在500℃的氧化行为

张来启 ,
潘昆明 ,
段立辉 ,
林均品

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北京科技大学新金属材料国家重点实验室, 北京 100083

张来启, 男, 1966年生, 教授, 博士

收稿日期: 2013-08-29

修回日期: 2013-09-16

网络出版日期: 2013-11-11

基金资助

国家自然科学基金项目50871012和国家重点基础研究发展计划

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OXIDATION BEHAVIOR OF IN SITU SYNTHESIZED MoSi₂－SiC COMPOSITES AT 500℃

ZHANG Laiqi ,
PAN Kunming ,
DUAN Lihui ,
LIN Junpin

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State Key Laboratory for Advanced Metals and Materials,University of Science and Technology Beijing, Beijing 100083

Received date: 2013-08-29

Revised date: 2013-09-16

Online published: 2013-11-11

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摘要

研究了不同SiC体积分数原位合成MoSi₂－SiC复合材料在500℃的氧化行为.经1000 h氧化的结果表明: 复合材料的氧化抗力明显好于单一MoSi₂,原位合成复合材料的氧化抗力好于传统的热压商用MoSi₂粉末和SiC粉末混合物制备的复合材料(外加复合材料),复合材料氧化1000 h后未发生pest现象. 其氧化动力学曲线分为:孕育期、快速氧化期和稳态氧化3个阶段. 氧化膜的相组成为MoO₃,非晶SiO₂和β－SiC, 材料的氧化过程主要是O₂与MoSi₂的作用,SiC未发生氧化. 氧化5, 10和20 h后样品表面形貌观察结果表明:材料的氧化优先在相界处发生, 初生氧化物以无定形态存在; 随着氧化的进行,逐渐形成MoO₃晶须和非晶SiO₂为主的团絮状氧化物;MoO₃晶须优先在表面凸凹不平处形核并长大.

关键词： 原位合成; MoSi₂－SiC复合材料; 低温氧化行为; pest现象

本文引用格式

张来启 , 潘昆明 , 段立辉 , 林均品 . 原位合成MoSi₂－SiC复合材料在500℃的氧化行为[J]. 金属学报, 2013 , 49(11) : 1303 -1310 . DOI: 10.3724/SP.J.1037.2013.00527

Abstract

The oxidation behavior for in situ synthesized MoSi₂－SiC composites with different SiC volume fraction at 500℃ was investigated. The results of oxidation for 1000 h indicate that the oxidation resistance for composites is significantly higher than that of monolithic MoSi₂, MoSi₂－30%SiC composite in situ synthesized possesses higher oxidation resistance compared with the traditional composite which is fabricated by hot－pressing the mixture of commercial powders of MoSi₂ and SiC. After oxidation for 1000 h, the composites have not been observed to disintegrate (pest). The oxidation kinetics curves are divided into three stages: incubation period, rapid oxidation period and the steady－state. The oxide scale consists of MoO₃, amorphous silica and β－SiC, therefore, the oxidation of the materials is mainly done between MoSi₂ and O₂, and SiC is not oxidized. The surface morphology observations of samples oxidized for 5, 10 and 20 h show that the phase boundary is the preferential oxidation site, the oxides formed at the initial stage of oxidation are irregular－shaped, and MoO₃ whisker and oxide cluster mainly composed of amorphous SiO₂ come gradually into being along with the development of oxidization. It is also found that the nucleation and growth of MoO₃ whisker preferentially take place at the concave and convex sites of substrate surfaces.

Key words： in situ synthesized; MoSi₂－SiC composite; oxidation behavior; pest

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