采用光电化学法研究了Incoloy800HT和Inconel600镍基合金在288℃高温水中形成的氧化膜的半导体性质. 组成镍合金氧化膜的物相为 Ni的氢氧化物或镍铁氧化物、Cr2O3和FexNi1-xCr2O4, 它们的特征带隙宽度分别为2.3, 2.9/3.5和4.1-4.3 eV. 在-400 mV至+400 mV范围内, Incoloy800HT合金表面氧化膜的光电化学响应表现为n型半导体性质, Inconel600合金表面氧化膜的光电化学响应表现为n/p型半导体性质, 同时, 在半导体性质从n型转变为p型的临界电压下, 光电化学响应相角发生180o转变.
The oxide films formed on Ni-based alloys in high temperature water with semiconductor properties were investigated by photoelectrochemical responses. Two Ni-based alloys (Incoloy800HT and Inconel600) were corroded at 288℃ for 100 h in water, and four contributions from the photocurrent are obtained by photoelectrochemical responses. Band gap energy of 2.3 eV is attributed to the presence of nickel hydroxide or nickel-ferrite oxide. Band gap energy of 2.9 and 3.5 eV are attributed to Cr2O3 and band gap energy in the range of 4.1-4.3 eV is attributed to the spinel phase FexNi1-xCr2O4. In the photoelectrochemical responses in function of the applied potential tests, the oxide films on Incoloy800HT alloy indicate n type semiconductor in the potential range from -400 mV\linebreak to +400 mV, and the oxide films on Inconel600 alloy indicate n/p type semiconductor. In addition, the dephasing angle of the photoelectrochemical responses has a 180$^{\circ}$ evolution at the potential where the semiconductor of oxide film turns from n to p type.
[1] Hamadou L, Kadri A, Benbrahim N, Petit J P. J Electrochem Soc, 2007; 154: 291
[2] Rangel C M, Silva T M, da Cunha Belo M. Electrochim Acta, 2005; 50: 5076
[3] Cheng Y F, Luo J L. Electrochim Acta, 1999; 44: 2947
[4] Schmuki P, B¨ohni H. J Electrochem Soc, 1992; 139: 1908
[5] Maurice V, YangWP, Marcus P. J Electrochem Soc, 1998; 145: 909
[6] Asami K, Hashimoto K, Shimodaira S. Corros Sci, 1978; 18: 151
[7] Sennour M, Marchetti L, Perrin S, Molins R, Pijolat M, Raquet O. Mater Sci Forum, 2008; 595: 539
[8] Sudensh T L, Wijesinghe L, Blackwood D J. Corros Sci, 2008; 50: 23
[9] Mac´ak J, Sajdl P, Kuˇcera P, Novotn´y R, Voˇsta J. Electrochim Acta, 2006; 51: 3566
[10] Carette F, Lafont M C, Chataignier G, Guinard L, Pieraggi B. Surf Interface Anal, 2002; 34: 135
[11] Carette F, Lafont M C, Guinard L, Pieraggi B. Mater High Temp, 2003; 20: 581
[12] Machet A, Galtayries A, Zanna S, Klein L, Maurice V, Jolivet P, Foucault M, Combrade P, Scott P, Marcus P. Electrochim Acta, 2004; 49: 3957
[13] Montemor M F, Ferreira M G, Hakiki N E, da Cunha Belo M D. Corros Sci, 2000; 42: 1635
[14] Fujimoto S, Chihara O, Shibata T. Mater Sci Forum, 1998; 289–292: 989
[15] Tsuchiya H, Fujimoto S, Chihara O, Shibata T. Electrochim Acta, 2002; 47: 4357
[16] Henry S, Mougin J,Wouters Y, Petit J P, Galerie A. Mater High Temp, 2000; 17: 231
[17] Calvarin G, Huntz A M, Molins R. Mater High Temp, 2000; 17: 257
[18] Balaji S, Kalai S R, John B L, Angappan S, Subramanian K, Augustin C O. Mater Sci Eng, 2005; B119: 119
[19] Sunseri O, Piazza S, Di Quarto F. J Electrochem Soc, 1990; 137: 2411
[20] Carpenter M K, Corrigan D A. J Electrochem Soc, 1989; 136: 1022
[21] Marchetti L, Perrin S, Raquet O, Pijolat M. Mater Sci Forum, 2008; 595–598: 529
[22] Marchetti L, Perrin S, Wouters Y, Martin F, Pijolat M. Electrochim Acta, 2010; 55: 5384
[23] Yves Marfaing. J Cryst Growth, 1996; 1–4: 205
[24] Sarrazin P, Galerie A, Fouletier J. Mechanisms of High Temperature Corrosion: A Kinetic Approach, Zurich: Trans Tech Publications Ltd., 2008, 488
[25] Macdonald D D. J Electrochem Soc, 1992; 139: 3434
