论文

TiAl合金基体表面Ti薄膜在升温过程中结构变化的分子动力学模拟

  • lin zhang ,
  • 李蔚 ,
  • 刘永利 ,
  • 孙本哲 ,
  • 王佳庆
展开
  • 东北大学理学院材料物理与化学研究所, 沈阳 110819
张林, 男, 1972年生, 博士, 副教授

收稿日期: 2010-12-01

  修回日期: 2011-02-10

  网络出版日期: 2011-08-11

基金资助

国家重点基础研究发展计划项目2011CB606403和中央高校基本科研业务费专项资金项目N90405001资助

MOLECULAR DYNAMICS SIMULATION OF STRUCTURAL CHANGES IN Ti FILMS COVERING OVER THE TiAl ALLOY SUBSTRATE DURING HEATING

  • LIN -zhang ,
  • LI Wei ,
  • LIU Yong-Li ,
  • XUN Ben-Zhe ,
  • YU Jia-Qiang
Expand
  • Institute of Materials Physics and Chemistry, College of Science, Northeastern University , Shenyang 110819

Received date: 2010-12-01

  Revised date: 2011-02-10

  Online published: 2011-08-11

Supported by

Supported by National Basic Research Program of China (No.2011CB606403) and the Fundamental Research Funds for the Central University (No.N90405001)

摘要

应用分子动力学方法计算了TiAl合金基体表面的Ti薄膜在温度升高过程中的结构变化, 计算中所用的势由嵌入原子模型得到, TiAl合金基体表面的结构分为Ti和Al原子层2种情况. 通过对键类型、原子均方位移、原子密度分布和分层局域结构内的原子排布等随温度的变化进行分析, 发现在升温过程中由于原子之间位置的交换, 薄膜结构分阶段发生变化; 基体表层分别为Ti或Al原子层时, Ti薄膜内的原子排列结构呈现出不同的变化形式.

本文引用格式

lin zhang , 李蔚 , 刘永利 , 孙本哲 , 王佳庆 . TiAl合金基体表面Ti薄膜在升温过程中结构变化的分子动力学模拟[J]. 金属学报, 2011 , 47(8) : 1080 -1085 . DOI: 10.3724/SP.J.1037.2010.00644

Abstract

Structural changes in Ti films covering over Ti or Al atomic layer on the TiAl substrate during heating were investigated by molecular dynamics simulations within the framework of embedded atom method (EAM). On the basis of analyses of bond–pair types, mean square displacements, atomic density functions, and atom packing in different shells, it is shown that the structural changes in the Ti film could involve several stages owing to atomic position interchanging. In addition, the Ti or Al layers play an important role in the structural changes in Ti films.

参考文献

[1] Peng C Q, Huang B Y, He Y H. Powder Metall Technol, 2001; 19: 297

(彭超群, 黄伯云, 贺跃辉. 粉末冶金技术, 2001; 19: 297)

[2] Liu W S, Huang B Y, Zhou K C, Gu S Q. Mater Rev, 2000; 14: 19

(刘文胜, 黄伯云, 周科朝, 顾松青. 材料导报, 2000; 14: 19)

[3] Ma L, Sun Y, He X D. J Aero Mater, 2008; 28: 5

(马李, 孙跃, 赫晓东. 航空材料学报, 2008; 28: 5)

[4] Duarte L I, Ramos A S, Vieira M F, Viana, F, Vieira M T, Kocak M. Intermetallics, 2006; 14: 1151

[5] Xu Q, Chaturvedi MC, Richards N L. Metall Mater Trans, 1999; 30A: 1717

[6] Arenas M F, Acoff V L. Weld J, 2003; 82: 110S

[7] Xu S N, Zhang L, Qi Y, Zhang C B. Physica, 2010; 405B: 632

[8] Zhang L, Xu S N, Zhang C B, Qi Y. Comp Mater Sci, 2009; 47: 162

[9] Zhang L, Zhang C B, Qi Y. Physica, 2009; 404B: 205

[10] Zhang L, Zhang C B, Qi Y. Phys Lett, 2008; 372A: 2874

[11] Zhang L, Sun H X. Solid State Comm, 2009; 149: 1722

[12] Zhang L, Sun H X. Chin J Chem Phys, 2009; 22: 69

[13] Farkas D, Roqueta D, Vilette A, Ternes K. Modell Simul Mater Sci Eng, 1996; 4: 359

[14] Ruda M, Farkas D, Abriata J. Phys Rev, 1996; 54B: 9765

[15] Zhang L, Wang S Q, Ye H Q. Chin Phys, 2006; 15: 610

[16] Honeycutt J D, Andersen H C. J Phys Chem, 1987; 91: 4950

[17] Clarke A S, Jonsson H. Phys Rev, 1993; 47E: 3975
文章导航

/