论文

界面耦合作用对Cu(Ni)/Sn-Ag-Cu/Cu(Ni)\,BGA焊点界面IMC形成与演化的影响

  • 李勋平 ,
  • 周敏波 ,
  • 夏建民 ,
  • 马骁 ,
  • 张新平
展开
  • 华南理工大学材料科学与工程学院, 广州 510640
李勋平, 男, 1979年生, 博士生

收稿日期: 2011-01-27

  修回日期: 2011-02-10

  网络出版日期: 2011-05-11

基金资助

新世纪优秀人才计划NCET-04-0824和广东省重大科技专项项目2009A080204005资助

EFFECT OF THE CROSS-INTERACTION ON THE FORMATION AND EVOLUTION OF INTERMETALLIC COMPOUNDS IN Cu(Ni)/Sn-Ag-Cu/Cu(Ni) BGA STRUCTURE SOLDER JOINTS

  • LI Xun-Beng ,
  • ZHOU Min-Bei ,
  • YAN Jian-Min ,
  • MA Xiao ,
  • ZHANG Xin-Beng
Expand
  • School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640

Received date: 2011-01-27

  Revised date: 2011-02-10

  Online published: 2011-05-11

Supported by

Supported by Program of New Century Excellent Talents in University (No.NCET-04-0824) and Science and Technology Major Project of Guangdong Province (No.2009A080204005)

摘要

研究了焊盘材料界面耦合作用对Cu(Ni)/Sn-3.0Ag-0.5Cu/Cu(Ni) BGA(Ball Grid Array)结构焊点焊后态和125℃等温时效过程中界面金属间化合物(IMC)的成分、形貌和生长动力学的影响. 结果表明, 凸点下金属层(UBM) Ni界面IMC的成分与钎料中Cu含量有关, 钎料中Cu含量较高时界面IMC为(Cu, Ni)6Sn5, 而Cu含量较低时, 则生成(Cu, Ni)3Sn4; Cu-Ni耦合易导致 Cu/Sn-3.0Ag-0.5Cu/Ni焊点中钎料/Ni界面IMC异常生长并产生剥离而进入钎料. 125℃等温时效过程中, Sn-3.0Ag-0.5Cu/Cu界面IMC的生长速率常数随钎料中Cu含量增加而提高, Cu-Cu耦合降低一次回流侧IMC生长速率常数; Cu-Ni耦合和Ni-Ni耦合均导致焊点一次回流Ni侧界面IMC的生长速率常数增大, 但Ni对界面IMC生长动力学的影响大于 Cu; Ni有利于抑制Cu界面Cu3Sn生长, 降低界面IMC生长速率, 但Cu-Ni耦合对Cu界面Cu3Sn中Kirkendall空洞率无明显影响.

本文引用格式

李勋平 , 周敏波 , 夏建民 , 马骁 , 张新平 . 界面耦合作用对Cu(Ni)/Sn-Ag-Cu/Cu(Ni)\,BGA焊点界面IMC形成与演化的影响[J]. 金属学报, 2011 , 47(5) : 611 -619 . DOI: 10.3724/SP.J.1037.2011.00063

Abstract

The formation and evolution of interfacial intermetallic compounds (IMCs) in Cu(Ni)/Sn-3.0Ag-0.5Cu/Cu(Ni) BGA (Ball Grid Array) structure solder joints both in the as-reflowed state and undergoing isothermal aging at 125℃ were investigated. The results show that there exists a significant cross-interaction effect of the solder pad/under bump metal (UBM) on the composition, morphology and growth kinetics of interfacial IMCs in solder joints. The reactions of solder/Ni UBM strongly depends on the Cu content of the solder, for a high Cu content, a continuous (Cu, Ni)6Sn5 layer forms at the interface, while for a low Cu content, a continuous (Ni, Cu)3Sn4 layer appears at the interface. The cross-interaction of Cu and Ni in Cu/Sn-3.0Ag-0.5Cu(SAC)/Ni solder joints has obvious influence on the composition and morphology of the interfacial IMC; and the IMC spalling phenomenon occurs at the interface of Ni side. During isothermal aging at 125℃, the growth rate constant of the interfacial IMC layer in SAC/Cu and Cu/SAC/Cu joints increases with the Cu concentration, and the cross-interaction of Cu and Cu decreases the interfacial IMC growth rate constant at once-reflowed Cu side. However, both of the cross-interactions of Cu-Ni and Ni-Ni increase the growth rate constant of the interfacial IMC at once-reflowed Ni side and Ni has a greater influence than Cu. The cross-interaction of Cu and Ni is beneficial for suppression of growth of Cu3Sn and reduction the growth rate of IMC at Cu side, while having no significant influence on the porosity of Kirkendall voids in Cu3Sn layer at Cu side of the joint.

参考文献

[1] Alam M O, Chan Y C. Chem Mater, 2003; 15: 4340

[2] Tsai C M, Luo W C, Chang C W, Shieh Y C, Kao C R. J Electro Mater, 2004; 33: 12

[3] Yoon J W, Jung S B. J Alloys Compd, 2008; 448: 177

[4] Wang Y W, Chang C C, Kao C R. J Alloys Compd, 2009; 478:L1

[5] Ho C E, Lin Y L, Kao C R. Chem Mater, 2002; 14: 949

[6] Lee J H, Shin D H, Kim Y S. Met Mater Int, 2003; 9: 577

[7] Hong K K, Ryu J B, Park C Y, Huh J Y. J Electro Mater, 2008; 37: 61

[8] Zhou M B, Li X P, Ma X, Zhang X P. Acta Metall Sin, 2010; 46: 569

(周敏波, 李勋平, 马骁, 张新平. 金属学报. 2010; 46: 569)

[9] Jang G Y, Duh J G. J Electro Mater, 2006; 35:2061

[10] Ahat S, Sheng M, Luo L. J Electro Mater, 2001; 30:1317

[11] Tsai J Y, Hu YC, Tsai C M, Kao C R. J Electro Mater, 2003; 32: 1203

[12] Jeon Y D, Nieland S, Ostmann A, Reichl H, Paik K W. J Electro Mater, 2003; 32: 548

[13] He M, Lau W H, Qi G J, Chen Z. Thin Solid Films, 2004; 462–463: 376

[14] Vuorinen V, Yu H, Laurila T, Kivilahti J K. J Electro Mater, 2008; 37: 792

[15] Chen H T, Wang C Q, Li M Y, Tian D W. Mater Lett, 2006; 60: 1669

[16] Vuorinen V, Laurila T, Mattila T, Heikinheimo E, Kivilahti J K. J Electro Mater, 2007; 36: 1355

[17] Gagkuano R A, Fine E M. J Electron Mater, 2003; 32: 1441

[18] Takenaka T, Kano S, Kajihara M, Kurokawa N, Sakamoto K. Mater Sci Eng, 2005; A396: 115

[19] Wang S J, Liu C Y. J Electro Mater, 2006; 35: 1955

[20] Yoon JW, Kim B K, Shur C C, Jung S B. J Alloys Compd, 2009; 486: 142

[21] Gao F, Takemoto T, Nishikawa H. Mater Sci Eng, 2006; A420: 39

[22] Zeng K J, Stierman R, Chiu TC, Edwards D. J Appl Phys, 2005: 024508

[23] Blair H D, Pan T Y, Nicholson J M. 48th Electronic Components Technology Conference, USA: IEEE, 1998: 259

[24] Gong J C, Liu C Q, Conway P P, Silberschmidt V V. Acta Mater, 2008; 56: 4291

[25] Gao F, Choi S, Subramanian K N, Bieler T R, Lucas J P, Achari A, Paruchuri M. Mater Sci Eng, 2003; A351: 190
文章导航

/