磁控溅射Al-Mg-B薄膜成分优化

曲文超; 吴爱民; 吴占玲; 白亦真; 姜辛

doi:10.3724/SP.J.1037.2010.00712

金属学报 >

2011 , Vol. 47 >Issue 5: 628 - 633

DOI: https://doi.org/10.3724/SP.J.1037.2010.00712

论文

磁控溅射Al-Mg-B薄膜成分优化

曲文超 ,
吴爱民 ,
吴占玲 ,
白亦真 ,
姜辛

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1) 大连理工大学机械工程与材料能源学部材料科学与工程学院, 大连 116024
2) 大连理工大学三束材料改性教育部重点实验室, 大连 116024
3) 大连理工大学物理与光电工程学院, 大连 116024
4) Institute of Materials Engineering, University of Siegen, Siegen 57076

曲文超, 男, 1983年生, 博士生

收稿日期: 2010-12-30

修回日期: 2011-01-17

网络出版日期: 2011-05-11

基金资助

中央高校基本科研业务费专项资金资助项目DUT10JN08

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COMPOSITION OPTIMIZATION OF Al-Mg-B THIN FILM PROPERTIES PREPERAED BY MAGNETRON SPUTTERING

QU Wen-Tiao ,
WU Ai-Min ,
WU Tie-Ling ,
BO Yi-Zhen ,
JIANG Xin

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1) School of Materials Science and Engineering, Faculty of Mechanical Engineering and Materials Energy, Dalian University of Technology, Dalian 116024
2) Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024
3) School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024
4) Institute of Materials Engineering, University of Siegen, Siegen 57076

Received date: 2010-12-30

Revised date: 2011-01-17

Online published: 2011-05-11

Supported by

Supported by the Fundament Research Funds for the Central Universities (No.DUT10JN08)

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摘要

采用多靶磁控共溅射技术, 利用高纯度Al, Mg和B单质靶材为溅射源, 室温下在单晶Si(100)表面上成功制备了低摩擦系数的非晶态Al-Mg-B硬质薄膜. 通过改变Al/Mg混合靶体积配比及靶材溅射功率来调控薄膜成分, 最终制备的Al-Mg-B薄膜成分接近 AlMgB₁₄相的元素成分比, 其Vickers硬度约为32 GPa. XRD及HR-TEM分析表明, 制备的薄膜均为非晶态. XPS测试表明薄膜内部存在B-B及Al-B单键; FTIR进一步测试表明, 在波数1100 cm^-1处出现较为明显的振动吸收峰, 证明制备的薄膜中含有B₁₂二十面体结构, 这也是薄膜具有超硬性的主要原因. 薄膜摩擦磨损测试表明薄膜摩擦系数在0.07左右.

关键词： 磁控溅射; Al-Mg-B薄膜; 硬度; B₁₂二十面体

本文引用格式

曲文超 , 吴爱民 , 吴占玲 , 白亦真 , 姜辛 . 磁控溅射Al-Mg-B薄膜成分优化[J]. 金属学报, 2011 , 47(5) : 628 -633 . DOI: 10.3724/SP.J.1037.2010.00712

Abstract

Aluminum magnesium boron ternary boride (AlMgB₁₄) possesses high hardness, high-temperature oxidation resistance, high temperature corrosion resistance, low density, low friction and other excellent properties, and could be widely used in tool, mold, micro-mechanical manufacture and aerospace, et al. In this paper, Al-Mg-B films have been prepared by multi-target (high pure aluminum, magnesium and boron targets) magnetron sputtering on the silicon (100) substrate at room temperature. The films with an atomic ratio of Al∶Mg∶B=1∶1∶14 were obtained by controlling the sputtering power and the volume ratio of Al/Mg co-target. X-ray diffraction (XRD) and High resolution transmission electron microscopy (HR-TEM) test results show that all the as-deposited films are amorphous. The X-ray photoelectron spectroscopy (XPS) results showe that there are some B-B and Al-B single bond in the as--deposited films, and the Fourier transform infrared spectroscopy (FTIR) tests indicate further that the films possess B₁₂ icosahedra structure. The hardness of the films as shown by nano indentor test will be increasing with the increase of content of B around B-AlMg isoelectronic line and close to boron--rich side, and up to 32 GPa with low friction coefficients of 0.06-0.08.

Key words： magnetron sputtering; Al-Mg-B film; hardness; B₁₂ icosahedra structure

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