垂直电场下BaTiO3单晶的畴变与压痕裂纹的演化
收稿日期: 2009-04-07
修回日期: 2009-12-14
网络出版日期: 2010-03-11
基金资助
国家自然科学基金项目50632010和50572006资助
DOMAIN SWITCHING AND THE CHANGE IN INDENTATION CRACKS FOR BaTiO3 SINGLE CRYSTAL UNDER THE ELECTRIC FIELD PERPENDICULAR TO THE POLARIZATION
Received date: 2009-04-07
Revised date: 2009-12-14
Online published: 2010-03-11
Supported by
Supported by National Natural Science Foundation of China (Nos.50632010 and 50572006)
赵显武 , 王建祥 , 褚武扬 , 乔利杰 . 垂直电场下BaTiO3单晶的畴变与压痕裂纹的演化[J]. 金属学报, 2010 , 46(3) : 340 -345 . DOI: 10.3724/SP.J.1037.2009.00210
As a ferroelectric material, BaTiO3 single crystal has the domain structure which can be changed by the application of mechanical stress and electric field. Therefore, the fracture behavior of the crystal is closely related with the domain switching. To understand the relationship between the fracture behavior and the domain switching clearly, the change of the indentation cracks and domain switching around the indentation under electric field perpendicular to the polarization of the samples were investigated through in situ observations by a differential interference contrast microscopy. The results show that for in-plane polarized sample, after completion of domain switching under the in-plane electric field perpendicular to the polarization of the crystal, the indentation cracks and the domains around the indentation are the same as the new indentation on the sample with new polarization state. In the case of applying in-plane electric field on the anti-plane polarized sample, the speed of the domain switching increases in the initial stage and decreases in the end stage, it has the maximum value as half of the domain switching completed. And the speed fluctuates in the\linebreak first stage.
Key words： BaTiO3 single crystal; domain switching; indentation crack; fracture
[1] Yang W. Mechatronic Reliability. Beijing: Tsinghua University Press, 2001: 9
(杨卫. 力电失效学. 北京: 清华大学出版社, 2001: 9)
[2] Hao T H, Gong X, Suo Z. J Mech Phys Solids, 1996; 44: 23
[3] Li J Y, Rogan R C, Ustundag E, Bhattacharya E. Nat Mater, 2005; 4: 776
[4] Rogan R C, Tamura N, Swift G A, Ustundag E. Nat Mater, 2003; 2: 379
[5] Holt M, Hassani K, Sutton M. Phys Rev Lett, 2005; 95: 085504
[6] Park Y B, Ruglovsky J L, Atwater H A. Appl Phys Lett, 2004; 85: 455
[7] Li Z, Foster C M, Dai X H, Chan S K, Lam D J. J Appl Phys, 1992; 71: 4481
[8] Zhao X W, Chu W Y, Su Y J, Li J X, Gao K W, Qiao L J. Acta Metall Sin, 2006; 42: 13
(赵显武, 褚武扬, 宿彦京, 李金许, 高克玮, 乔利杰. 金属学报, 2006; 42: 13)
[9] Yang W, Fang F, Tao M. Int J Solids Struct, 2001; 38: 2203
[10] Busche M J, Hsia K J. Scr Mater, 2001; 44: 207
[11] Fang F, Yang W. Mater Lett, 2002; 57: 198
[12] Oliver W C, Pharr G M. J Mater Res, 1992; 7: 1564
[13] Bhushan B, Li X D. Int Mater Rev, 2003; 48: 125
[14] Li X D, Bhushan B. Mater Charact, 2002; 48: 11
[15] Gong J H. Fracture Mechanics of Ceramics. Beijing: Tsinghua University Press, 2001: 88
(龚江宏. 陶瓷材料断裂力学. 北京: 清华大学出版社, 2001: 88)
[16] Yoffe E H. Philos Mag, 1982; 46: 617
[17] Jiang B, Bai Y, Cao J L, Su Y J, Shi S Q, Chu W Y, Qiao L J. J Appl Phys, 2008; 103: 116102
/
| 〈 |
|
〉 |
