金属学报  2008, Vol. 44 Issue (11): 1399-1403

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氧分压对Zn 1-xCo xO 1-δ磁性半导体磁特性的调控作用

季刚;张云鹏;颜世申;梅良模;张泽

北京工业大学固体微结构与性能研究所

OXYGEN PARTIAL PRESSURE MODULATION EFFECT OF THE FERROMAGNETISM IN Zn1-xCoxO1-δ MAGNETIC SEMICONDUCTOR

JI Gang;Ze ZHANG;;;

北京工业大学

季刚; 张云鹏; 颜世申; 梅良模; 张泽 . 氧分压对Zn 1-xCo xO 1-δ磁性半导体磁特性的调控作用[J]. 金属学报, 2008, 44(11): 1399-1403 .
, , , , . OXYGEN PARTIAL PRESSURE MODULATION EFFECT OF THE FERROMAGNETISM IN Zn1-xCoxO1-δ MAGNETIC SEMICONDUCTOR[J]. Acta Metall Sin, 2008, 44(11): 1399-1403 .

摘要 参考文献 相关文章 Metrics 全文: PDF(3746 KB)   摘要:  利用电子显微分析技术对高Co含量的室温铁磁性半导体Zn　1-x　Co　x　O　1-δ 进行了微观表征.证明了氧含量是决定Zn　1-x　Co　x　O　1-δ薄膜微观结构和磁性能的重要因素. 在缺氧环境下, 薄膜由含有大量氧缺位的纤锌矿结构的Zn　1-x　Co　x　O　1-δ纳米晶(直径约5 nm)和填充其间的Zn-Co-O非晶相组成, 两相对薄膜宏观磁性均有贡献; 在富氧的环境下, 非晶Zn-Co-O相消失, 出现了CoO反铁磁相, 纤锌矿结构Zn　1-x　Co　x　O　1-δ中的氧缺位大量减少, 晶粒长大到10-20 nm, 室温铁磁性逐渐减弱, 直至消失. 关键词 ： 室温铁磁性半导体,  氧分压     Abstract： The microstructure of the room temperature ferromagnetic semiconductor Zn1-xCoxO1-δ was investigated by analytical electron microscopy. The experimental results indicated that the oxygen content decided the microstructure and the magnetic property of Zn1-xCoxO1-δ. The films deposited under poor oxygen were consistent of 5nm nanocrystal wurtzite Zn1-xCoxO1-δ and amorphous Co. They were all ferromagnetic phases. The films deposited under rich oxygen were consistent of 10~20nm nanocrystal Zn1-xCoxO1-δ and antiferromagnetic phase CoO. The concentration of the oxygen vacancies was greatly reduced, and the room temperature ferromagnetism was greatly weakened and even disappeared. Key words： room temperature ferromagnetic semiconductor    oxygen partial pressure    oxygen vacancy    modulation 收稿日期: 2008-03-20      ZTFLH:  O472   服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 季刚 张云鹏 颜世申 梅良模 张泽 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y2008/V44/I11/1399 [1]Datta S,Das B.Appl Phys Lett,1990;56:665 [2]Prinz G,Hathaway K.Phys Today,1995;48(4):24 [3]Wolf S A,Awschalom D D,Buhrman R A,Daughton J M, yon Molnar S,Roukes M L,Chtchelkaova A Y,Treger D M.Science,2001;294:1488 [4]Schmidt G,Ferrand D,Molenkamp L W,Filip A T,van Wees B J.Phys Rev,2000;62B:R4790 [5]Hanbicki A T,Jonker B T,Itskos G,Kioseoglou G,Petrou A.Appl Phys Lett,2002;80:1240 [6]Schmidt G,Molenkamp L W.J Appl Phys,2001;89:7443 [7]Dietl T,Ohno H,Matsukura F,Cibert J,Ferrand D.Sci- ence,2000;287:1019 [8]Sato K,Katayama-Yoshida H.Jpn J Appl Phys,2000; 39B:L555 [9]Sato K,Katayama-Yoshida H.Semicond Sci Technol, 2002;17:367 [10]Liu G L,Cao Q.Deng J X,Xing P F,Tian Y F,Chen Y X,Yan S S,Mei L M.Appl Phys Lett,2007;90:052504 [11]Yan S S,Ren C,Wang X,Xin Y,Zhou Z X,Mei L M,Ren M J,Chen Y X,Liu Y H,Garmestani H.Appl Phys Lett, 2004;84:2376 [12]Venkatesan M,Fitzgerald C B,Lunney J G,Coey J M D. Phys Rev Lett,2004;93:177206 [13]Lee H J,Jeong S Y,Cho C R,Park C H.Appl Phys Lett, 2002;81:4020 [14]Yin S,Xu M X,Yang L,Liu J F,Rosner H,Hahn H, Gleiter H,Schild D,Doyle S,Liu T,Hu T D,Takayama- Muromachi E,Jiang J Z.Phys Rev,2006;73B:224408 [15]Ueda K,Tabata H,Kawai T.Appl Phys Lett,2001;79: 988 [16]Singh P,Chawla A K,Kaur D,Chandra R.Mater Lett, 2007;61:2050 [17]Pease D M,Fasihuddin A,Daniel M,Budnick J I.Ultra- microscopy,2001;88:1 [18]Wang Z L,Yin J S,Jiang Y D.Micron,2000;31:571 [19]Liu Y Z,Xu Q Y,Schmidt H,Hartmann L,Hochmuth H, Lorenz M,Grundmann M,Han X D,Zhang Z.Appl Phys Lett,2007;90:154101 [20]Coey J M D,Venkatesan M,Fitzgerald C B.Nat Mater, 2005;4:173 [1] 张炳森 李茂林 王晶晶 孙本哲 祁阳. Bi2Sr2CaCu2O8+δ薄膜的分子束外延法制备及结晶性[J]. 金属学报, 2009, 45(6): 663-672. Viewed Full text Abstract Cited   Shared      Discussed