金属学报  2005, Vol. 41 Issue (1): 84-

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ZnO:Al(ZAO)薄膜的制备与特性研究

裴志亮 张小波 王铁钢 宫 骏 孙 超 闻立时

中国科学院金属研究所; 沈阳110016

Preparation and Properties Of ZnO:Al (ZAO) Thin Films Eposited by DC Reactive Magnetron Sputtering

PEI Zhiliang; ZHANG Xiaobo; WANG Tiegang; GONG Jun; SUN Chao; WEN Lishi

Institute of Metal Research; The Chinese Academy of Sciences; Shenyang 110016

裴志亮; 张小波; 王铁钢; 宫骏; 孙超; 闻立时 . ZnO:Al(ZAO)薄膜的制备与特性研究[J]. 金属学报, 2005, 41(1): 84-.
, , , , , . Preparation and Properties Of ZnO:Al (ZAO) Thin Films Eposited by DC Reactive Magnetron Sputtering[J]. Acta Metall Sin, 2005, 41(1): 84-.

摘要 参考文献 相关文章 Metrics 全文: PDF(266 KB)   摘要: 采用磁控溅射技术制备了ZnO:Al(ZAO)薄膜。研究了不同的工艺参数对薄膜的组织结构和光电特性的影响.实验结果表明，多晶ZAO薄膜具有（001）择优取向且呈柱状生长，能量机制决定其微观生长状态。讨论了薄膜的内应力，高的沉积温度和低的溅射功率可有效减小薄膜的内应力。优化的ZAO薄膜电阻率和在可见光区的平均透射率可分别达到310-4-410-4cm和80%以上。 关键词 ： 直流反应磁控溅射,  ZAO薄膜,  生长机制     Abstract： Al-doped ZnO(ZAO) layers have been prepared by reactive DC magnetron sputtering from Zn:2.0%Al (mass fraction) alloy target on glass and silicon wafer substrates. The influences of the deposition parameters on the crystallization behavior as well as electrical and optical properties of ZAO films have been investigated. The crystallinity of the films was improved and the columnar crystalline growth became dominant as the substrate temperature increased. All the films show a compressive stress, which increased as the DC power increased, while it decreased as the substrate temperature was raised. Optical transmittance up to 80% in the visible range and electrical resistivity as low as were obtained under optimal deposition conditions. Key words： DC reactive magnetron sputtering    ZAO film    growth mechanism 收稿日期: 2004-01-18      ZTFLH:  TB383   服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 裴志亮 张小波 王铁钢 宫骏 孙超 闻立时 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y2005/V41/I1/84 [1] Granqvist G. Appl Phys, 1993; A57: 19 [2] Beneking C, Rech B, Wieder S, Kluth O, Wagner H, Pam-melsberger W, Geyer R, Rubel H, Lechner P, Schade H. Thin Solid Films, 1999; 351: 241 [3] Dawar A L, Joshi J C. J Mater Sci, 1984; 19: 1 [4] Ellmer K, Kudella F, Mientus R, Schieck R, Friechter S.Thin Solid Films, 1994; 247: 15 [5] Weller H C, Mauch R H, Bauer G H. Sol Energ Mat Sol,1992; C27: 217 [6] Pei Z L, Sun C, Tan M H, Xiao J Q, Guan D H, Huang R F, Wen L S. J Appl Phys, 2001; 90: 3432 [7] Chang J F, Shen C C, Hon M H. Ceramics Int, 2003; 29:245 [8] Szyszka B. Thin Solid Films, 1999; 351: 164 [9] Szyszka B, Jager S. J Non-Cryst Solid, 1997; 218: 74 [10] Bachari E M, Baud G, Amor S B, Jacquet M. Thin Solid Films, 1999; 348: 165 [11] Fujimura N, Nishihara T, Goto S, Xu J, Ito T. J Cryst Growth, 1993; 130: 269 [12] Ellmer K, Cebulla R. 1997 Proc MRS Spring Meeting,1997: 245 [13] Segmuller A, Murakami M, In: Tu K N, Rosenberg R eds. Analytical Techniques for Thin Films, Boston: Academic, 1988: 143 [14] Cebulla R, Wendt R, Ellmer K. J Appl Phys, 1998; 83:1087 [15] Chang J F, Hon M H. Thin Solid Films, 2001; 386: 79 [16] Kim K H, Park K C, Ma D Y. J Appl Phys, 1997; 81:7764 [17] Giulio M D, Micocci G, Rella R, Siciliano P, Tepore A.Thin Solid Films, 1987; 148: 273 [18] Madhuri K V, Naidu B S, Hussain O M, Eddrief M, JulienC. Mater Sci Eng, 2001; B86: 165 [19] Hamberg I, Granqvist C G. J Appl Phys, 1986; 60: R123 [20] Wu W F, Chiou B S. Thin Solid Films, 1997; 298: 221 [1] 李双明, 耿振博, 胡锐, 刘毅, 罗锡明. 高熔点金属区域熔炼中晶体生长角和凝固速率对熔区稳定性的影响[J]. 金属学报, 2015, 51(1): 114-120. [2] 王传琦， 刘洪喜， 周荣， 蒋业华， 张晓伟. 机械振动辅助激光熔覆NiCrBSi-TiC复合涂层中颗粒相行为特征[J]. 金属学报, 2013, 49(2): 221-228. [3] 宋鹏 陆建生 张德丰 吕建国 李德江. La和Hf对CoNiCrAl合金涂层高温氧化行为的影响[J]. 金属学报, 2011, 47(6): 655-662. [4] 付恩刚; 庄大明; 张弓 . 掺铝氧化锌薄膜的红外性能及机制[J]. 金属学报, 2005, 41(3): 333-336 . [5] 吕维洁; 卞玉君; 张小农; 张荻; 方平伟; 吴人洁 . 原位合成TiC／Ti基复合材料增强体的生长机制[J]. 金属学报, 1999, 35(5): 536-540 . [6] 王岱峰;李戈扬;李鹏兴;吴人洁. SiC_p-Al复合材料蠕变断裂与空洞生长[J]. 金属学报, 1996, 32(4): 433-437. Viewed Full text Abstract Cited   Shared      Discussed