金属学报  2005, Vol. 41 Issue (1): 36-

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电场、残余应力和介质对PZT--5H铁电陶瓷压痕裂纹扩展的耦合作用

黄海友 宿彦京 高克玮 褚武扬

北京科技大学材料物理系; 北京 100083

Coupling Effect of Electric Field, Residual Stress and Medium on Propagation of Indentation Cracks in A PZT--5H Ceramic

HUANG Haiyou; SU Yanjing; QIAO Lijie; GAO Kewei; CHU Wuyang

Department of Materials Physics; University of Science and Technology Beijing; Beijing 100083

黄海友; 宿彦京; 高克玮; 褚武扬 . 电场、残余应力和介质对PZT--5H铁电陶瓷压痕裂纹扩展的耦合作用[J]. 金属学报, 2005, 41(1): 36-.
, , , , . Coupling Effect of Electric Field, Residual Stress and Medium on Propagation of Indentation Cracks in A PZT--5H Ceramic[J]. Acta Metall Sin, 2005, 41(1): 36-.

摘要 参考文献 相关文章 Metrics 全文: PDF(285 KB)   摘要: 通过在硅油中加恒电场实验, 研究了PZT--5H铁电陶瓷Vickers压痕裂纹的扩展行为，探讨了电场、残余应力以及介质间的耦合作用。结果表明,残余应力不足以使压痕裂纹在硅油中发生滞后扩展，只有外加恒电场E>0.2 kV/cm, 电场、残余应力和介质的耦合才能使压痕裂纹在经过一个孕育期tp后发生滞后扩展。由于有效应力强度因子随裂纹扩展而下降, 故压痕裂纹扩展10---30m后就将止裂. 压痕裂纹在硅油中滞后扩展的门槛电场强度EDP=0.2 kV/cm。如外加电场大于临界电场Ep=5.25 kV/cm，电场和残余应力的耦合可使压痕裂纹瞬时扩展；保持恒电场, 裂纹能继续扩展，然后止裂.如外加电场大于12.6 kV/cm，不需要残余应力协助, 电致裂纹也能在光滑试样上形核、长大、连接, 导致试样断裂。试样发生电致滞后断裂的门槛电场EDP=12.6 kV/cm, 发生瞬时断裂的临界电场EF=19.1 kV/cm。 关键词 ： PZT--5H铁电陶瓷,  压痕裂纹,  耦合作用     Abstract：The experiment of a coupling effect on propagation of unloaded indentation cracks in a PZT--5H ceramic shows that residual stress itself is too small to induce delayed propagation of the indentation crack in silicon oil. If applied constant electric field is larger than 0.2 kV/cm, the coupling of electric field, residual stress and silicon oil can cause delayed propagation of the crack after incubation time, but the crack will arrest after propagating for 10---30 um because of decrease of the stress intensity factor with increasing the crack length. The threshold electric field of delayed propagation of the crack in silicon oil is EDP=0.2 kV/cm. If the field is larger than the critical field of 5.25 kV/cm, coupling of the electric field and residual stress is enough to cause instant propagation of the crack and propagates continuously, then arrests if under the constant electric field. If the applied field is larger than 12.6 kV/cm, even if no residual stress, the electric field itself can make many cracks initiate, grow and connect in a smooth specimen, resulting in delayed failure. The threshold electric field of delayed failure of a smooth specimen in silicon oil is 12.6 kV/cm and the critical electric field for instant failure is EF=19.1 kV/cm. Key words： PZT--5H ferroelectric ceramic    indentation crack    coupling effect 收稿日期: 2004-03-01      ZTFLH:  TG111.91   服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 黄海友 宿彦京 高克玮 褚武扬 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y2005/V41/I1/36 [1] Yang W. Mechatronic Reliability. Beijing: Tsinghua Uni-versity Press, 2001; 151(杨卫.力电失效学.北京:清华大学出版社,2001:151) [2] Tobin A G, Pak Y E. Proc SPIE Int Soc Opt Eng, 1993;1916: 78 [3] Wang H Y, Singh R N. J Appl Phys, 1997; 81: 7471 [4] Sun C T, Park S. Proc SPIE Int Soc Opt Eng, 1995; 2441:213 [5] Chantikul P, Anstis G R, Laun B R, Marshall D B. J AmCeram Soc, 1981; 64: 539 [6] Wang Y, Chu W Y, Su Y J, Qiao L. Mater Lett, 2003; 57:1156 [7] Wang Y, Chu W Y, Su Y J. Mater Sci Eng, 2002; 95B:263 [8] Wang Y, Chu W Y, Su Y J, Gao K W, Liu H, Qiao L J.Acta Metall Sin, 2002; 39: 182(王毅,褚武扬,宿彦京,高克玮,刘辉,乔利杰.金属学报,2002;39:182) [9] Wang Y, Chu W Y, Gao K W, Su Y J, Qiao L J. ApplPhys Lett, 2003; 82: 1583 [10] Michalske T A, Freiman S W. J Am Ceram Soc, 1983; 66:284 [11] Freiman S W, White G S, Fuller J R. J Am Ceram Soc,1985; 68: 108 [12] Huang H Y, Chu W Y, Su Y J, Gao K W, Qiao L J. ActaMetall Sin, 2004; 41: 962(黄海友,褚武扬,宿彦京,高克玮,乔利杰.金属学报,2004;41:962) [1] 赵显武 褚武扬 乔利杰. 垂直电场下BaTiO3单晶的畴变与压痕裂纹的演化[J]. 金属学报, 2010, 46(3): 340-345. [2] 包小倩 高学绪 朱洁 张茂才 周寿增. Nd含量对纳米晶NdxFe94-xB6合金磁性能的影响[J]. 金属学报, 2009, 45(8): 988-993. [3] 赵显武; 褚武扬; 宿彦京; 李金许; 高克玮; 乔利杰 . 恒应力下BaTiO3单晶压痕裂纹的滞后扩展和畴变[J]. 金属学报, 2006, 42(1): 13-18 . [4] 赵显武; 褚武扬; 宿彦京; 高克玮; 乔利杰 . 应力和电场单独或耦合作用下PZT--5H卸载压痕裂纹的扩展[J]. 金属学报, 2005, 41(7): 708-712 . [5] 刘丽妹; 史艳晶; 聂莉莹; 李爱君; 胡金江; 陈伟 . 纳米复合永磁材料的交换耦合作用和有效各向异性[J]. 金属学报, 2005, 41(3): 317-320 . [6] 赵显武; 宿彦京; 高克玮; 乔利杰; 褚武扬; 许颖 . 单晶硅压痕裂纹的氢致滞后扩展[J]. 金属学报, 2005, 41(2): 173-177 . [7] 王瑞敏; 宿彦京; 高克玮; 乔利杰; 褚武扬 . 恒电场下BaTiO3陶瓷压痕裂纹的滞后扩展[J]. 金属学报, 2004, 40(11): 1175-1178 . Viewed Full text Abstract Cited   Shared      Discussed