金属学报  2004, Vol. 40 Issue (12): 1243-1247

论文 本期目录 | 过刊浏览 |

掺氟对Y-Ba-Cu-O高温超导体电子结构的影响

王新华 1;2); 王玲玲 1）;王怀玉 3）;邓辉球 1）;黄维清 1)

1) 湖南大学应用物理系; 长沙 410082；2) 湖南大学材料科学与工程学院; 长沙 410082；3) 清华大学物理系; 北京 100086

INFLUENCES OF FLUORINE DOPING TO THE ELECTRONIC STRUCTURE OF THE Y-Ba-Cu-O UPERCONDUCTORS

WANG Xinhua 1; 2); WANG Lingling 1); WANG Huaiyu 3);DENG Huiqiu 1); HUANG Weiqing 1)

1) Department of Applied Physics; Hunan University; Changsha 410082；；2) College of Materials Science and Engineering; Hunan University;Changsha 410082；3) Department of Physics; Tsinghua University; Beijing 100086

王新华; 王玲玲; 王怀玉; 邓辉球; 黄维清 . 掺氟对Y-Ba-Cu-O高温超导体电子结构的影响[J]. 金属学报, 2004, 40(12): 1243-1247 .
, , , , . INFLUENCES OF FLUORINE DOPING TO THE ELECTRONIC STRUCTURE OF THE Y-Ba-Cu-O UPERCONDUCTORS[J]. Acta Metall Sin, 2004, 40(12): 1243-1247 .

摘要 参考文献 相关文章 Metrics 全文: PDF(184 KB)   摘要: 采用Recursion方法计算了不同掺氟量和不同替代位置下Y-Ba-Cu-O的电子结构, 从掺氟Y-Ba-Cu-O各晶位的态密度(DOS), 可进一步得到Fermi能EF、 Fermi能级处的态密度N(EF)以及各晶位原子价等重要数据. 各模型的计算 结果表明, 掺入氟后引起CuO2平面上Cu的原子价升高和O的价位变得更负, 使Cu位空穴数目增加和O位空穴数目减少, 且以后者的变化为主. 掺氟改变了 Y-Ba-Cu-O中CuO2平面上载流子的浓度, 影响了电荷从CuO2平面向 CuO链的转移, 增加了Fermi面电子浓度, 这可能是对 高温氧化物超导电性产生影响的原因. 关键词 ： Y-Ba-Cu-O超导体,  氟掺杂,  态密度     Abstract：The electronic structures of fluorine-doped Y-Ba-Cu-O superconductors are calculated with Recursion method. The electronic density of states (DOS), Fermi energy (EF), atomic valences of different elements are obtained. The results show that the valences of Cu atom increase and those of O atom decrease, which means that the amount of hole carrier of Cu increases and that of O decreases. Fluorine-doping changes hole carrier concentration in the CuO2 plane, and thus improves the superconducting properties of Y--Ba--Cu--O. Key words： Y-Ba-Cu-O superconductor    fluorine doping    electronic density of states (DOS) 收稿日期: 2003-12-29      ZTFLH:  O511   服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 王新华 王玲玲 王怀玉 邓辉球 黄维清 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y2004/V40/I12/1243 [1] Wu M K, Ashburn J R, Torng C J, Hor P H, Meng R L, Gao L, Huang Z J, Wang Y Q, Chu C W. Phys Rev Lett, 1987; 58: 908 [2] Zhao Z X, Chen L, Yang Q. Chin Sci Bull,1987;32:661 [3] Liu Z Y, Persson M, Eriksson S. Z Phys B-Condens Matter,1989; 74:423 [4] Felner I, Nowik I, Yeshurun Y. Phys Rev, 1987; 36B: 3923 [5] Mokhtari M, Perrin C, Sergent M, Furet E, Halet J F, Saillard J Y, Ressouche E, Burlet P. Solid State Commun, 1995; 93: 487 [6] Cui Y J, Xie C W, Yang X Y. Acta Phys Sin, 1997; 46: 783 (崔永杰,谢崇伟,杨晓云.物理学报,1997;46:783) [7] Shpanchenko R V, Rozova M G, Abakumov A M, Ardashnikova E I, Kovba M L, Putilin S N, Antipov E V, Lebedev O I, van Tendeloo G V. Physica, 1997; 280C: 272 [8] Massiot P, Perrin C, Guilloux-Viry M, Gauneau M. Physica, 1998; 299C: 197 [9] LaGraff J R, Behrman E C, Taylor J A T, Rotella F J, Jorgensen J D, Wang L Q, Mattocks P G. Phys Rev, 1989; 39B: 347 [10] Perrin C, Dinia A, Pena O, Sergent M, Burlet P, RossatMignod J. Solid State Commun, 1990; 76: 401 [11] Cho S K, Kim D, Choi J S, Kim K H. J Phys Chem Solids, 1990; 51: 113 [12] Fedorenko V V, Galakhov V R, Elokhina L V, Finkelstein L D, Naish V E, Kurmaev E Z, Butorin S M, Nordgren E J, Tyagi A K, Rao U R K, Iyer R M. Physica, 1994; 221C: 71 [13] Moorthy P N, Tyagi A K, Velmurugan S, Narasimhan S V, Rao U R K. Physica, 1996; 260C: 52 [14] Deng H Q, Gao X H, Wang X G, Zhao L H. Trans Nonferrous Met Soc Chin, 2000; 10: 176 [15] Liu H L, Cao X W, Qu L M, Chen N Y. Chin Sci, 1997; 27B: 189 (刘洪霖,曹晓卫,瞿丽曼,陈念贻.中国科学,1997;27B:189) [16] Lee K H, Park S S, Jo C G, Lee W R, Lee H M, Choi U S. Solid State Commun, 1996; 100: 365 [17] Haydock R. Solid State Phys, New York: Academic Press, 1980: 216 [18] Harrison W A. Electronic Structure and the Properties of Solids. San Fransisco: Freeman, 1980: 48, 451 [19] Wang H Y, Liu F S, Wang C Y. J Phys: Condens Matter, 1989; 1: 1983 [20] Richert B A, Allen R E. Phys Rev, 1988; 37B: 7496 [21] Wang H Y. PhD Thesis, Peking University, Beijing, 1990 (王怀玉.北京大学博士学位论文,1990) [22] Zhang H, Sato H. Phys Rev Lett, 1993; 70: 1697l [1] 吴萍;姜恩永;王存达;白海力;刘裕光;王合英. [Co/Ti],[Co/Cu(Ni)]多层膜的结构与磁性[J]. 金属学报, 1997, 33(6): 625-630. [2] 孟长功;徐东生;郭建亭;胡壮麒. NiAl的成键特征[J]. 金属学报, 1993, 29(2): 8-12. Viewed Full text Abstract Cited   Shared      Discussed