金属学报  1981, Vol. 17 Issue (2): 177-184

论文 本期目录 | 过刊浏览 |

有源位错群的动力学特性——Ⅰ.用计算机模拟有源位错群的滑移运动

巴图;雷琼芝

中国科学院金属研究所;中国科学院金属研究所

DYNAMICAL BEHAVIOUR OF A DISLOCATION GROUP CONTAINING A SOURCE Ⅰ.Computer Simulation of the Glide Motion of a Dislocation Group Emitted from a Source

Patu and Lei Qiongzhi (Institute of Metal Research; Academia Sinica)

巴图;雷琼芝. 有源位错群的动力学特性——Ⅰ.用计算机模拟有源位错群的滑移运动[J]. 金属学报, 1981, 17(2): 177-184.
, . DYNAMICAL BEHAVIOUR OF A DISLOCATION GROUP CONTAINING A SOURCE Ⅰ.Computer Simulation of the Glide Motion of a Dislocation Group Emitted from a Source[J]. Acta Metall Sin, 1981, 17(2): 177-184.

摘要 参考文献 相关文章 Metrics 全文: PDF(475 KB)   摘要: 本文从位错源开动条件和ν=c_0(τ/τ_0))~m的关系式出发,利用硅单晶中孤立位错运动的实验数据,计算模拟了在恒定应力作用下有源位错群的滑移运动,得出: 1.有源位错群中领先位错的运动速度(v_1)与孤立位错的运动速度(v_(iso))之比约等于1.36,这和实验结果比较接近。 2.在有源位错群中,位错的平均速度等于v_(iso)。 3.在有源位错群中,位错的平均密度与外加应力成正比,位错源产生位错的速率 dN/dt∝τ_α~(m+1)e~(-(Q/kT) Abstract：According to ν=c_0(τ/τ_0)~m and the condition of dislocation source operation, the glide motion of a dislocation group emitted from a source under a constant applied stress, is simulated on a computer by using experimental data of isolated dislocation velocity in silicon crystals. The following conclusion is obtained:1. The velocity of a leading dislocation in a group emitted from a source is approximately 1.36 times the velocity of an isolated dislocation. This result agrees with the experimental ones obtained in silicon crystals.2. The average velocity of all dislocations in a group emitted from a source, is equal to the velocity of an isolated dislocation.3. In a dislocation group emitted from a source, the average density of all dislocations, is proportional to τ_a, and the rate of generation of dislocations from a source is found to be:dN/dt∞τ_a~(m+1) e~(-Q/kT). 收稿日期: 1981-02-18      服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 巴图 雷琼芝 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y1981/V17/I2/177 [1] Rosenfield, A. R. and Hahn, G. T., Dislocation Dynamics, ed by A. R. Rosenfield, et al., McGraw-Hill, 1968, p. 255． [2] Yokobori, T., Yokobori, A. T. Jr, and Kamei, A., Phil. Mag., 30 (1974) , 367． [3] Yokobori, A. T. Jr, Yokobori, T. and Kamei, A., J. Appl. Phys., 46 (1975) , 3720． [4] 巴图,何怡贞,物理学报,29(1980) ,698． [5] Arsenault, R. J. and Kuo, C. J, K., Met. Trans., 9A (1978) , 459． [6] Patu, and He, Yizhen (巴图,何怡贞), Phys. Status Solidi, (a). 59 (1980) , 195． No related articles found! Viewed Full text Abstract Cited   Shared      Discussed