金属学报  1988, Vol. 24 Issue (1): 104-110

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二元合金离子剥离Auger谱逐层分析

曲哲;谢天生

中国科学院金属研究所;中国科学院金属研究所;沈阳文化路

AUGER-ION SPUTTERING ANALYSIS OF BINARY ALLOYS

QU Zhe;XIE Tiansheng Institute of Metal Research; Academia Sinica; Shenyang

曲哲;谢天生. 二元合金离子剥离Auger谱逐层分析[J]. 金属学报, 1988, 24(1): 104-110.
, . AUGER-ION SPUTTERING ANALYSIS OF BINARY ALLOYS[J]. Acta Metall Sin, 1988, 24(1): 104-110.

摘要 参考文献 相关文章 Metrics 全文: PDF(627 KB)   摘要: 对均匀二元合金的表面进行机械清洁处理,得到元素深度分布为已知的试样,并对这样的试样做了离子剥离逐层分析.试验结果表明,Auger-离子剥离逐层分析得到的元素分布不能精确地反映元素的真实分布.除因选择性剥离造成的稳定态浓度偏离体浓度外,有时还在近表面处出现一个元素“贫乏层”(或富集层).本文也对引起逐层分析曲线“失真”的原因及用这种方法做逐层分析时应注意的问题做了简单说明. 关键词 ： 俄歇离子剥离,  刮削表面     Abstract：The element distribution of the homogeneous binary samples withmechanicaly scraped surfaces have been studied by means of Auger-Ion sputteringtechnique. The resulted profiling curves, generally show that the steady state con-centration usualy deviates more or less from the bulk concentration and that anobservable "spike" appears in the near surface layer. The amplitude of the divia-tion or the "spike" depends on the system and sputtering condition. Therefore, theAuger-Ion sputtering profiling curve could not reflect the original element distribu-tion exactly due to the interaction between energetic ions and atoms on the samplesurface. Some effects leading to the "distortion" and some aspects which must betaken in to account in using the profiling curve have been discussed briefly. Key words： Auger-Ion sputtering    scraped surfaces 收稿日期: 1988-01-18      服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 曲哲 谢天生 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y1988/V24/I1/104 1 Farber W. Betr G, Braun P. Nucl Instrum Methods, 1976; 132: 351 2 曲哲,孙玉珍,屠礼勋.分析化学,1986; 14: 753 3 Qu Zhe. Surf Sci, 1985; 161: L549 4 Kelly R. Surf Interface Anal, 1985; 7: 1 No related articles found! Viewed Full text Abstract Cited   Shared      Discussed