金属学报  1990, Vol. 26 Issue (2): 136-141

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TiN薄膜的合成及其性能研究

周建坤;柳襄怀;陈酉善;王曦;郑志宏;黄巍;邹世昌

中国科学院上海冶金研究所;中国科学院上海冶金研究所离子束开放研究实验室;副研究员;上海(200050);中国科学院上海冶金研究所;中国科学院上海冶金研究所;中国科学院上海冶金研究所;中国科学院上海冶金研究所;中国科学院上海冶金研究所

SYNTHESIS OF TiN FILM BY ION BEAM ENHANCED DEPOSITION AND ITS PROPERTIES

ZHOU Jiankun;LIU Xianghuai;CHEN Youshan;WANG Xi;ZHENG Zhihong;HUANG Wei;ZOU Shichang Shanghai Institute of Metallurgy. Academia Sinica Ion Beam Laboratory;Shanghai Institute of Metallurgy;Academia Sinica; Shanghai 200050

周建坤;柳襄怀;陈酉善;王曦;郑志宏;黄巍;邹世昌. TiN薄膜的合成及其性能研究[J]. 金属学报, 1990, 26(2): 136-141.
, , , , , , . SYNTHESIS OF TiN FILM BY ION BEAM ENHANCED DEPOSITION AND ITS PROPERTIES[J]. Acta Metall Sin, 1990, 26(2): 136-141.

摘要 参考文献 相关文章 Metrics 全文: PDF(969 KB)   摘要: 用电子束蒸发沉积钛和40keV氮离子束轰击交替进行的办法合成了TiN薄膜。用RBS,AES,TEM,XPS,和X射线衍射研究TiN薄膜的组分和结构表明:用离子束增强沉积制备的TiN薄膜主要由TiN相构成;晶粒大小为30—40um,无择优取向;而非离子束轰击沉积的薄膜则是无定形的;用离子束增强沉积制备的TiN薄膜,其氧含量明显小于无离子束轰击薄膜的值;在TiN薄膜和衬底之间存在一个界面混合区,厚度为40um左右。机械性能测试表明,TiN薄膜具有高的显微硬度,低的摩擦系数。 关键词 ： TiN薄膜,  离子束增强沉积     Abstract：The TiN film was synthesized by alternate deposition of Ti and nitro-gen ion bombardment under 40 keV at room temperature. The component depthprofiles and the structure of the film have been investigated by means of RBS,AES, TEM, XPS and X-ray diffraction. The results showed that the TiN films syn-thesized by ion beam enhanced deposition (IBED) are mainly composed of TiNcrystallites, sized about 30-40 nm, with random orientation. The oxygen contaminationin TiN film prepared by IBED is less than that of the deposited film without nitrogenion bombardment. It was confirmed that there is a significant intermixed layer, about40nm thick, at the interfaces. The films formed by IBED exhibit superior hardnessand improvement over the wear resistance and frictiton properties. Key words： TiN film    ion beam enhanced deposition 收稿日期: 1990-02-18      服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 周建坤 柳襄怀 陈酉善 王曦 郑志宏 黄巍 邹世昌 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y1990/V26/I2/136 1 Rossnagel S M, Cuomo J J. MRS Bull, 1987; 16: 40 2 Happer J M E, Cuotm J J, Gambino R J, Kaufman H R. Nucl Instrum Meth Phys Res, 1985; B7/8: 915 3 Kant R A, Sartwell B D, Singer I L, Vardiman R G. Nucl Instrum Meth Phys Res, 1985; B7/8: 915 4 Sartwell B D. In: Hochman R F ed., Ion Plating and Implantation, Metals Park: ASM, 1986: 81 5 Kiuchi M, Tomita M, Fujii K, Satou M, Shimizu R. Jpn J Appl Phys. 1987; 26: 98 Satou M, Andoh Y, Ogata K, Suzuki Y, Matsuda K, Fujimoto F. Jpn J Appl Phys, 1985; 24: 656 6 Liu Xianghuai, Xue Bin. Zheng Zhihong, Zhou Zuyao, Zou Shichang. Nucl Instrum Meth Phys Res, 1989; B39: 185 7 Dawson P T, Tzatzov K K. Surf Sci, 1985; 149: 10 [1] 时惠英, 杨超, 蒋百灵, 黄蓓, 王迪. 双脉冲磁控溅射峰值靶电流密度对TiN薄膜结构与力学性能的影响[J]. 金属学报, 2018, 54(6): 927-934. [2] 李铸国; 华学明; 吴毅雄; 三宅正司 . 低能离子束辅照对溅射镀TiN膜生长的影响[J]. 金属学报, 2005, 41(10): 1087-1090 . [3] 徐东;朱宏;汤丽娟;杨云洁;郑志宏;柳襄怀;谷口滋次;柴田俊夫. 离子束增强沉积氮化硅膜及TiAl抗高温氧化性能的改善[J]. 金属学报, 1995, 31(16): 164-172. [4] 刘裕光;姜恩永;程启;孙长庆. 对向靶溅射TiN薄膜的结构和物性[J]. 金属学报, 1995, 31(13): 31-34. [5] 刘长洪;李文治;李恒德. CH_4离子束增强沉积对TiC薄膜显微硬度的影响机制[J]. 金属学报, 1994, 30(19): 318-322. [6] 刘长清;李美栓;金柱京;吴维(山文). 精细TiN陶瓷薄膜的抗拉强度和界面结合强度[J]. 金属学报, 1992, 28(9): 91-94. [7] 王曦;杨根庆;柳襄怀;郑志宏;黄巍;周祖尧;邹世昌. 氮气辅助氙离子束增强沉积TiN薄膜及其机械性能[J]. 金属学报, 1992, 28(3): 87-91. [8] 王曦;周建坤;陈酉善;柳襄怀;邹世昌. 离子束增强沉积合成氮化钛薄膜的计算机模拟[J]. 金属学报, 1991, 27(3): 136-141. Viewed Full text Abstract Cited   Shared      Discussed